Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing patterned single crystal thin film, patterned single crystal thin film and resonator

A single crystal thin film and patterning technology, applied in the field of patterned single crystal thin film preparation, patterned single crystal thin film and resonators, can solve the problems of difficult control of bonding pressure, large stress accumulation and high requirements for preparation conditions

Active Publication Date: 2021-07-06
CHIMEMS MICROELECTRONICS CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The object of the present invention is to provide a method for preparing a patterned single crystal thin film, a patterned single crystal thin film and a resonator, through the method for preparing a patterned single crystal thin film to solve the problem of high requirements for preparation conditions in the prior art: the whole chip Wafer bonding peeling, the bonding pressure is not easy to control, and the stress accumulation is too large, which is easy to damage the single crystal thin film area required by the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing patterned single crystal thin film, patterned single crystal thin film and resonator
  • Method for preparing patterned single crystal thin film, patterned single crystal thin film and resonator
  • Method for preparing patterned single crystal thin film, patterned single crystal thin film and resonator

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0038] A method for preparing a patterned single crystal thin film, comprising the steps of:

[0039] S1) High-energy ions A are injected from the lower surface of the piezoelectric single-crystal wafer, and the high-energy ions A enter the interior of the piezoelectric single-crystal wafer to form a damaged layer 4, and the damaged layer 4 separates the piezoelectric single-crystal wafer into an upper piezoelectric layer 5 and single crystal thin film layer 1 to obtain a damaged piezoelectric single crystal wafer;

[0040] S2) patterning the single crystal thin film layer 1 on the lower surface of the damaged piezoelectric single crystal wafer;

[0041] S3) After patterning the single crystal thin film layer 1, prepare a patterned bonding layer 2 on the lower surface of the piezoelectric single crystal wafer;

[0042] S4) Lay the substrate 3 on the bonding layer, perform bonding curing treatment and wafer splitting treatment, remove the upper piezoelectric layer, and prepare...

Embodiment 1

[0058] This embodiment proposes a preparation process of a patterned lithium niobate single crystal thin film, specifically:

[0059] 1) A lithium niobate piezoelectric single crystal wafer is selected, and positive monovalent helium ions (He + ), the implantation depth is 0.3 μm; a damaged layer is formed inside the lithium niobate piezoelectric single crystal wafer, and the damaged layer divides the lithium niobate piezoelectric single crystal wafer into an upper lithium niobate piezoelectric layer and a lithium niobate single crystal wafer. crystal thin film layer;

[0060] 2) Coating photoresist on the lower surface of the damaged lithium niobate piezoelectric single crystal wafer, exposing the photoresist with a patterned mask plate, and developing with a developing solution to obtain a patterned photoresist mask film, performing ion beam sputtering etching on the lithium niobate single crystal thin film layer with a patterned photoresist mask, the etching depth is great...

Embodiment 2

[0067] This embodiment proposes a preparation process of a patterned lithium tantalate single crystal thin film, specifically:

[0068] 1) A lithium tantalate piezoelectric single crystal wafer is selected, and positive monovalent hydrogen ions (H + ), the implantation depth is 2 μm; a damage layer is formed inside the lithium tantalate piezoelectric single crystal wafer, and the damage layer divides the lithium tantalate piezoelectric single crystal wafer into an upper lithium tantalate piezoelectric layer and a lithium tantalate single crystal film layer;

[0069] 2) Coating photoresist on the lower surface of the damaged lithium tantalate piezoelectric single crystal wafer, exposing the photoresist with a patterned mask plate, developing with a developer, and obtaining a patterned photoresist mask Reactive ion etching (RIE) is carried out to the lithium tantalate single crystal film layer with a patterned photoresist mask, the depth of etching is greater than the thickness...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of single crystal thin film preparation, in particular to a method for preparing a patterned single crystal thin film, a patterned single crystal thin film and a resonator; comprising the following steps: injecting high-energy ions from the lower surface of a piezoelectric single crystal wafer, Form a damaged layer to obtain a damaged piezoelectric single crystal wafer; pattern the single crystal thin film layer on the lower surface of the damaged piezoelectric single crystal wafer; prepare a patterned bonding layer; stack the substrates On the bonding layer, bond curing and wafer splitting are performed, the upper piezoelectric layer is removed, and a patterned single crystal film is prepared. The preparation method of the patterned single crystal thin film is used to solve the technical problems in the prior art that the bonding pressure is not easy to control when the bonding of the entire wafer is peeled off, and the stress accumulation is too large, which is easy to damage the single crystal thin film area required by the device. .

Description

technical field [0001] The invention relates to the technical field of single crystal thin film preparation, in particular to a method for preparing a patterned single crystal thin film, a patterned single crystal thin film and a resonator. Background technique [0002] In order to meet the high integration of wireless mobile communications, the demand for single-crystal thin films in the MEMS manufacturing process (Microfabrication Process) continues to increase. Under the condition that the molecular beam derivatization length cannot meet the growth of single-crystal thin films with a fixed crystal orientation, the ion Infused peel technology. [0003] However, the combination of ion implantation stripping technology and bonding technology requires full-area bonding, wafer splitting, and single-crystal thin films in sequence in the device manufacturing process, and then the single-crystal thin films are patterned using photolithography and etching processes. processing. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/48C23C14/58H03H9/17
CPCC23C14/48C23C14/588H03H9/171
Inventor 罗文博简珂吴传贵帅垚
Owner CHIMEMS MICROELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com