Thermal field crucible adjusting type heat preservation device for polycrystalline silicon

Abstract

The invention discloses a thermal field crucible adjusting type heat preservation device for polycrystalline silicon. The heat preservation device comprises a box body; a supporting seat and a power box are arranged on the bottom surface of the box body; an observation window and a control panel are arranged on the front surface of the box body; a box door is arranged on one side face of the box body; a cover plate is arranged on the top surface of the box body; a feeding pipe is arranged on the top surface of the cover plate; second electric push rods are fixedly connected to two sides of thebottom surface of the cover plate; heat preservation layers are arranged in the peripheral side walls of the box body; connecting sliding grooves are formed in the upper portions of the two sides ofthe inner bottom surface of the box body; a supporting plate is arranged between the two connecting sliding grooves; a first electric push rod is arranged at the lower end of the inner wall of one side of the box body, the movable end of the first electric push rod is fixedly connected with the middle of one side face of the supporting plate, a supporting groove is fixedly connected to the top face of the supporting plate, a crucible is placed in the supporting groove, and a heat preservation cover is arranged outside the supporting groove, and both sides of the heat preservation cover are fixedly connected to the movable ends of the corresponding second electric push rods. The heat preservation device is simple in structure and convenient to mount and dismount, the working efficiency is effectively improved, and the heat preservation effect is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material production equipment, in particular to a thermal field crucible adjustable heat preservation equipment for polysilicon. Background technique [0002] When polysilicon is produced, use a quartz crucible to fill the polysilicon material, add an appropriate amount of borosilicate, and then heat and melt. After melting, it should be kept for about 20 minutes, and then poured into the graphite mold. After slowly solidifying and cooling, the polysilicon ingot is obtained. [0003] Polysilicon needs to use heat preservation equipment in the production process, and the quality of heat preservation effect directly determines the quality of polysilicon production, but most of the existing heat preservation devices for crucibles are fixed, which is inconvenient to disassemble. When the heat preservation device is deformed or damaged due to high temperature, it is necessary to repair or replace...

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Problems solved by technology

[0003] Polysilicon needs to use heat preservation equipment in the production process, and the quality of heat preservation effect directly determines the quality of polysilicon production, but most of the existing heat preservation devices for crucibles are fixed, which is inconvenient to disassemble. When the heat preservation device is deformed or damaged due to high temperature, it is necessary to repair or replace the entire device, which is time-consuming, labor-intensive, and costly, and it is inconvenient to replace and take out the crucible, which is not conducive to improving work efficiency

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