Polishing pad and chemical-mechanical polishing equipment

A polishing pad and polishing layer technology, which is applied in the direction of grinding/polishing equipment, metal processing equipment, grinding tools, etc., can solve the problems of reduced utilization rate of polishing liquid, damage, waste of polishing liquid, etc., to maintain excellent performance and maintain polishing Environment, the effect of improving utilization efficiency

Active Publication Date: 2020-02-18
XIAN ESWIN SILICON WAFER TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the shape of the polishing layer groove of the polishing pad is simple and the function is single. In the actual use process, there will be polishing waste liquid and waste debris that cannot be removed in time to block the groove and scratch the surface of the silicon wafer, or the polishing liquid stays in the groove for too long. Short lead to a decrease in the utilization rate of the polishing liquid, increase the consumption of the polishing liquid, etc., which will damage and hinder the transportation of the polishing liquid in the polishing area, the uniformity of distribution, the residence time, the mixing efficiency of the old and new polishing liquid, and the change of the silicon wafer, polishing pad and polishing liquid The temperature between the three affects the polishing rate and polishing effect of the silicon wafer surface, reduces the yield of the silicon wafer, wastes a large amount of polishing fluid, and shortens the service life of the CMP polishing pad, resulting in premature failure of the CMP polishing pad.

Method used

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  • Polishing pad and chemical-mechanical polishing equipment
  • Polishing pad and chemical-mechanical polishing equipment
  • Polishing pad and chemical-mechanical polishing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0090] This example figure 1 and Figure 2a As shown, the polishing pad 10 includes a substrate layer and a polishing layer, and the polishing layer includes at least three circumferential grooves 14 arranged in sequence from the center 15 to the circumference 11 along the circumferential direction and a first radial groove 14 arranged along the radial direction. Groove 12 and second radial groove 13; Described first radial groove 12 connects circle center 15 and circumference 11, divides the area 16 between circle center 15 and circle 11 into circle sectors, the number of circle sectors Equal to the number of grooves of the first radial groove 12; said circle sector divides the polishing zone 16 between the adjacent circumferential grooves 14 evenly with an arithmetic progression from the center 15 to the circumference 11, forming a second diameter groove 13, the second radial groove 13 evenly divides the area between the k-1th circumferential groove and the kth circumferent...

Embodiment 2

[0093] This embodiment is based on Embodiment 1, changing the width of the first radial groove 12, and dividing the first radial groove 12 into the first radial groove wide groove 121 and the first radial groove narrow groove 122, the first radial groove wide groove 121 and the first radial groove narrow groove 122 appear alternately along the radial direction as Figure 2b As shown, the width of the wide groove 121 of the first radial groove is equal to the width of the circumferential groove 14, and the width of the wide groove 121 of the first radial groove is greater than that of the narrow groove 122 of the first radial groove width. Dividing the first radial groove 12 into wide grooves and narrow grooves and alternately distributing them along the radial direction is beneficial to control the speed at which the polishing liquid flows out along the first radial groove 12, promotes uniform distribution of the polishing liquid as a whole, and maintains a stable polishing en...

Embodiment 3

[0095] This example image 3As shown, the polishing pad 210 includes a substrate layer and a polishing layer, and the polishing layer includes at least three circumferential grooves 214 arranged in sequence from the center 215 to the circumference 211 along the circumferential direction and a second radial groove 214 arranged along the radial direction. Groove 213, the second radial groove 213 from the center of circle 215 to the circumference 211 in an equiproportional sequence gradually increases and evenly divides the polishing zone 216 between adjacent circumferential grooves 214 and connects with the outer radial direction of the circumferential groove 214 The second radial groove 213 is evenly distributed on both sides of the inner second radial groove 213, the width of the circumferential groove 214 is equal to the width of the second radial groove 213 in the radial direction, and the second radial groove 213 The area between the k-1th circumferential groove and the kth...

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PUM

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Abstract

The invention provides a polishing pad and chemical-mechanical polishing equipment, and belongs to the technical field of semiconductors. The polishing pad comprises a substrate layer and a polishinglayer located on the substrate layer, wherein the polishing layer comprises a plurality of concentric circumferential trenches formed in the circumferential direction and a plurality of radial trenches which are formed in the radial direction and communicate with the adjacent trenches in the circumferential direction. By means of the polishing pad and the chemical-mechanical polishing equipment, the utilization rate of polishing liquid can be increased, the service life of the polishing pad can be prolonged, and the polishing quality can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a polishing pad and chemical mechanical polishing equipment. Background technique [0002] In the process of multi-wire cutting, grinding and other processing, micro-defects will remain on the surface of the silicon wafer, a surface stress damage layer will be formed, and impurities such as various metal ions will be adsorbed. The clean and bright "mirror surface" with extremely low precision meets the technical requirements for silicon wafers for the preparation of various microelectronic devices. It is necessary to polish the surface of silicon wafers to remove micro-defects and surface damage layers caused by previous processes on the surface. [0003] Chemical mechanical planarization or chemical mechanical polishing (CMP) is one of the key technologies for planarizing or polishing the surface of silicon wafers, and it is also the only technology that can achieve globa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/26B24B57/02
CPCB24B37/26B24B57/02
Inventor 蒲以松惠聪阴俊沛
Owner XIAN ESWIN SILICON WAFER TECH CO LTD
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