E-band low-loss EBG multilayer integrated band-pass filter

A low-loss, integrated band technology, applied in the radio frequency field, can solve the problems of independent control of the pass band, low selectivity, difficult processing, etc., and achieve the effects of miniaturization design, unique frequency selection characteristics, and easy processing

Inactive Publication Date: 2020-01-21
AEROSPACE SCI & IND MICROELECTRONICS SYST INST CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is: in order to solve the problems of the existing traditional cavity filter with large size, independent control of the passband, low selectivity, and difficult processing, an E-band low-loss EBG multi-layer filter is provided. Integrated Bandpass Filter

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  • E-band low-loss EBG multilayer integrated band-pass filter
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  • E-band low-loss EBG multilayer integrated band-pass filter

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with the accompanying drawings.

[0024] Such as figure 1 As shown, this embodiment provides an E-band low-loss EBG multilayer integrated bandpass filter, which includes a lower metal plate, a middle metal plate and an upper metal plate, and the metal plates are stacked up and down, and each metal plate The plate is an electromagnetic bandgap structural unit patch, that is, the electromagnetic bandgap structural unit patch is stacked, and there is a gap between adjacent metal layers. This filter is different from the existing traditional filter. This filter uses EBG multilayer integration technology, has no dielectric loss, has high Q performance, and can be applied to millimeter wave or better frequency bands.

[0025] Such as figure 1 As shown, the multilayer integrated bandpass filter is composed of an upper metal plate 01, an intermediate metal plate 02-18, and a lower metal plate 19. There is an...

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Abstract

The invention relates to the technical field of radio frequency, and discloses an E-band low-loss EBG multilayer integrated band-pass filter. The filter comprises a three-dimensional structure formedby laminating a plurality of layers of electromagnetic band gap structure unit patches of two-dimensional structures, wherein a gap is formed between every two adjacent electromagnetic band gap structure unit patches, ad a coupling hole is formed in the center of each electromagnetic band gap structure unit patch, and the size of each coupling hole is gradually changed in the laminating direction.According to the technical scheme provided by the invention, the three-dimensional cavity structure is realized by adopting a gradual change type electromagnetic band gap structure unit patch laminated structure; compared with a traditional cavity filter, the filter is easier to process, saves the cost, and solves the problem of low processing precision; according to the technical scheme, while the band-pass filter is achieved, due to the fact that the vertical structure is adopted, the plane size of the filter is greatly reduced especially when high-order design is carried out, thereby facilitating miniaturization design; according to the technical scheme, the propagation of electromagnetic waves in a certain direction or propagation in all directions can be prevented within a certain frequency band.

Description

technical field [0001] The invention relates to the field of radio frequency technology, in particular to an E-band low-loss EBG multilayer integrated bandpass filter. Background technique [0002] Electromagnetic bandgap structure, also known as "electromagnetic crystal", is a periodic structure composed of one medium periodically arranged in another medium. Its basic working principle is that when the electromagnetic wave propagates in a dielectric material with a periodic structure, it will be modulated to form an energy band structure, and there may be a band gap between the energy band structures. When the operating frequency of the electromagnetic wave falls in the band gap, since there is no state in the band gap, the incident wave in any direction will be totally reflected. Therefore, the electromagnetic bandgap structure has a bandstop characteristic. At the same time, the electromagnetic bandgap structure also changes the propagation constant in the passband, whi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/20
CPCH01P1/2005
Inventor 杨德梦孙同帅姜鑫姚昌文刘洋
Owner AEROSPACE SCI & IND MICROELECTRONICS SYST INST CO LTD
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