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CMOS image sensor with time delay integration and its forming method

A time delay integration, image sensor technology, applied in semiconductor devices, electric solid state devices, radiation control devices, etc., to achieve the effect of increasing pixel fill factor, reducing occupied area, and improving performance

Active Publication Date: 2022-04-26
BRIGATES MICROELECTRONICS KUNSHAN
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  • Application Information

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Problems solved by technology

[0005] However, the existing time delay integration CMOS image sensor still needs to improve the performance

Method used

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  • CMOS image sensor with time delay integration and its forming method
  • CMOS image sensor with time delay integration and its forming method
  • CMOS image sensor with time delay integration and its forming method

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Experimental program
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Embodiment Construction

[0026] As mentioned in the background, time-delay integration CMOS image sensors need to improve performance.

[0027] Under the condition of strong light, the phenomenon that the electrons in the channel below the gate structure overflow into the adjacent channel after reaching the full well is called the diffusion phenomenon. The diffusion phenomenon will cause the adjacent channel to be subjected to charge crosstalk, resulting in crosstalked pixels The signal cannot reflect the real light, causing the number of saturated pixels to increase than the actual one, resulting in image color distortion, halo and other defects in the output image, thereby reducing the quality of the output image of the image sensor.

[0028] figure 1 It is a schematic diagram of the top-view structure of a time-delay-integrated CMOS image sensor, figure 2 yes figure 1 Schematic diagram of the cross-sectional structure along the A-B tangent direction.

[0029] Please refer to figure 1 and fig...

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Abstract

A time-delay-integrated CMOS image sensor and its forming method, the image sensor includes: a substrate, the substrate includes several photoelectric regions, and each of the photoelectric regions includes first photoelectric regions arranged along the first direction , a first isolation region and a second photoelectric region, the first isolation region has a number of mutually separated source and drain regions; several gate group units located on the substrate surface of each of the photoelectric regions, each of the gate The group unit includes a first gate structure, a second gate structure and a third gate structure, the first gate structure is located on the substrate surface of the first photoelectric region, and the second gate structure is located on the first gate structure The substrate surface of the second photoelectric region, the third gate structure is located on the substrate surface of the first isolation region, and the projection of each third gate structure on the substrate surface surrounds one of the source and drain regions on the substrate Surface projection. Thereby improving the performance of the CMOS image sensor with time delay integration.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a time-delay-integrated CMOS image sensor and a forming method thereof. Background technique [0002] Image sensors have been widely used in digital cameras, mobile phones, medical devices, automobiles and other applications. The rapid development of image sensor technology has made people have higher requirements for the performance of image sensors. [0003] A Time Delay Integration (TDI) image sensor is an evolution of a linear image sensor. The imaging mechanism of the time-delay integration image sensor is to expose the pixels passing by the shooting object row by row, and accumulate the exposure results, so as to solve the problem of weak imaging signal caused by insufficient exposure time of high-speed moving objects. The time delay integral image sensor can increase the effective exposure time and improve the signal-to-noise ratio of the image. [0004] There are two type...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14605H01L27/14607H01L27/1463H01L27/14612H01L27/14643H01L27/14689
Inventor 王林胡万景黄金德
Owner BRIGATES MICROELECTRONICS KUNSHAN
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