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CMOS image sensor with time delay integration and forming method thereof

A Time Delay Integration, Image Sensor Technology

Active Publication Date: 2020-01-10
BRIGATES MICROELECTRONICS KUNSHAN
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] However, the existing time delay integration CMOS image sensor still needs to improve the performance

Method used

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  • CMOS image sensor with time delay integration and forming method thereof
  • CMOS image sensor with time delay integration and forming method thereof
  • CMOS image sensor with time delay integration and forming method thereof

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Experimental program
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Effect test

Embodiment Construction

[0026] As mentioned in the background, time-delay integration CMOS image sensors need to improve performance.

[0027] Under the condition of strong light, the phenomenon that the electrons in the channel below the gate structure overflow into the adjacent channel after reaching the full well is called the diffusion phenomenon. The diffusion phenomenon will cause the adjacent channel to be subjected to charge crosstalk, resulting in crosstalked pixels The signal cannot reflect the real light, causing the number of saturated pixels to increase than the actual one, resulting in image color distortion, halo and other defects in the output image, thereby reducing the quality of the output image of the image sensor.

[0028] figure 1 It is a schematic diagram of the top-view structure of a time-delay-integrated CMOS image sensor, figure 2 yes figure 1 Schematic diagram of the cross-sectional structure along the A-B tangent direction.

[0029] Please refer to figure 1 and fig...

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Abstract

The invention discloses a CMOS image sensor with time delay integration and a forming method thereof. The image sensor comprises a substrate and a plurality of grid group units. The substrate includesa plurality of photoelectric regions; each photoelectric region includes a first photoelectric region, a first isolation region and a second photoelectric region which are arranged in a first direction; and a plurality of mutually separated source-drain regions are arranged in the first isolation region. The plurality of grid group units are arranged on the surface of the substrate in each photoelectric region; each grid group unit includes a first grid structure, a second grid structure and a third grid structure; the first gate structure is arranged on the surface of the substrate of the first photoelectric region; the second grid structure is arranged on the surface of the substrate of the second photoelectric region; the third grid structure is arranged on the surface of the substrateof the first isolation region; and the projection of each third grid structure on the surface of the substrate encircles the projection of one source-drain region on the surface of the substrate. Therefore, the performance of the CMOS image sensor with the time delay integration is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a time-delay-integrated CMOS image sensor and a forming method thereof. Background technique [0002] Image sensors have been widely used in digital cameras, mobile phones, medical devices, automobiles and other applications. The rapid development of image sensor technology has made people have higher requirements for the performance of image sensors. [0003] A Time Delay Integration (TDI) image sensor is an evolution of a linear image sensor. The imaging mechanism of the time-delay integration image sensor is to expose the pixels passing by the shooting object row by row, and accumulate the exposure results, so as to solve the problem of weak imaging signal caused by insufficient exposure time of high-speed moving objects. The time delay integral image sensor can increase the effective exposure time and improve the signal-to-noise ratio of the image. [0004] There are two type...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14605H01L27/14607H01L27/1463H01L27/14612H01L27/14643H01L27/14689
Inventor 王林胡万景黄金德
Owner BRIGATES MICROELECTRONICS KUNSHAN
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