A method for preparing molybdenum sulfide two-dimensional material using mocvd equipment

A two-dimensional material, molybdenum sulfide technology, applied in the direction of molybdenum sulfide, metal material coating process, gaseous chemical plating, etc., can solve the problem of difficult to control the growth direction of crystal nuclei, and achieve a controllable single-layer film thickness Effect

Active Publication Date: 2020-09-04
ZHEJIANG UNIV
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Problems solved by technology

MoS 2 Material growth generally adopts a one-step method, that is, from the very beginning of MoS 2 The nucleation and film stitching are all completed under the same conditions. The disadvantage of this method is the nucleation density, the growth direction of the crystal nuclei is difficult to control, and it is difficult to achieve a uniform single-layer MoS 2 film

Method used

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  • A method for preparing molybdenum sulfide two-dimensional material using mocvd equipment
  • A method for preparing molybdenum sulfide two-dimensional material using mocvd equipment
  • A method for preparing molybdenum sulfide two-dimensional material using mocvd equipment

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Embodiment 1

[0046] A kind of adopts MOCVD equipment to prepare MoS 2 (Molybdenum sulfide) the method for two-dimensional material, comprises the steps:

[0047] (1) The sapphire substrate 3 uses α-Al 2 o 3 Sapphire substrate (ZMKJ 2INCH A-axis), without any pretreatment, such as figure 1 shown;

[0048] (2) Transfer the Sapphire substrate into the quartz table 4 in the MOCVD chamber 2, the initial pressure in the chamber is controlled at 90 Torr, and the chamber is always fed with N from the gas source inlet 1 2 20slm;

[0049] (3) The chemical vapor deposition method is used for the reaction: slowly increase the growth temperature in the chamber to 1000°C in 10 minutes, and keep the temperature at a constant temperature for 5 minutes; first pass 0.1slm H 2 S gas source for 10 minutes to passivate the surface of the Sapphire substrate; then 5×10-5 slm Mo(CO) 6 Air source while maintaining 0.1slm H 2 The S gas source is introduced, and the MoS is grown at a pressure of 90Torr and a...

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Abstract

The invention discloses a method for preparing a molybdenum sulfide two-dimensional material by adopting MOCVD (Metal Organic Chemical Vapor Deposition) equipment, and the method is used for growing the MoS2 two-dimensional material on a Sapphire substrate in multiple steps, and comprises the following steps of: adopting Sapphire as the substrate; conveying the Sapphire substrate into an MOCVD (Metal Organic Chemical Vapor Deposition) equipment; introduced N2 gas into a MOCVD cavity; raising the temperature to a constant-temperature growth temperature, wherein the initial pressure in the cavity is 90Torr; introducing H2S as a sulfur gas source; introducing MO (CO) 6 as a molybdenum gas source for nucleation; reducing the pressure intensity in the cavity step by step, and promoting nucleation crystal grains to transversely grow so as to obtain the MoS2 two-dimensional material growing on the Saphire substrate. The preparation method provided by the invention has the advantages of simplegrowth process, controllable material thickness, high quality and the like. Through the preparation method provided by the invention, the MoS2 two-dimensional material which is adjustable in forbidden band width and can be used for flexible chip application is grown.

Description

technical field [0001] The invention relates to the technical field of two-dimensional molybdenum sulfide materials, in particular to a method for preparing two-dimensional molybdenum sulfide materials using MOCVD equipment. Background technique [0002] Single-layer transition metal chalcogenides have attracted extensive attention in recent years because of their excellent properties in fundamental physics such as mechanics, heat, optics, and electricity. Among them, single-layer molybdenum disulfide is the most typical transition metal chalcogenide. Due to its wide range of sources and good relative stability, it has been studied more. At present, people have developed a variety of methods for preparing molybdenum disulfide, and the MOCVD method is recognized as the best method for preparing large-scale uniform two-dimensional materials. At the same time, it is desired to grow MoS with controllable thickness, large scale and high quality. 2 The lattice matching of the ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G39/06C23C16/30C23C16/455C23C16/52C23C16/02
CPCC01G39/06C01P2004/04C23C16/02C23C16/305C23C16/455C23C16/52
Inventor 郁发新莫炯炯王志宇冯光建
Owner ZHEJIANG UNIV
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