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Plasma porous structure with hotspot structure and preparation method thereof

A technology of plasma and porous structure, applied in the field of preparation of ionic porous structure, can solve the problems of low density of hot spots and low surface roughness of nanopores, etc.

Inactive Publication Date: 2019-12-31
XI'AN POLYTECHNIC UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a plasma porous structure with a hotspot structure, which solves the problems of low hotspot density and low surface roughness of nanopores in the existing nanohole hotspot structure

Method used

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  • Plasma porous structure with hotspot structure and preparation method thereof
  • Plasma porous structure with hotspot structure and preparation method thereof
  • Plasma porous structure with hotspot structure and preparation method thereof

Examples

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preparation example Construction

[0040] A method for preparing a plasma porous structure with a hot spot structure, specifically comprising the following steps:

[0041] Step 1: Immerse the silicon wafer in the acetone solution for 5-10 minutes, then take the silicon wafer out of the acetone solution and put it in the ethanol solution for cleaning for 5-10 minutes, take the silicon wafer out of the ethanol solution and put it into the deionized Soak in water for 5-15 minutes, then take the wafer out of deionized water and dry it with nitrogen;

[0042] Step 2: Put the dried silicon wafer into the magnetron sputtering coating equipment and proceed as follows: pump the magnetron sputtering coating equipment to a vacuum and then pass in argon gas, then add a tantalum target and a silver target to blow dry Carry out the magnetron co-sputtering deposition on the silicon wafer after that to prepare the plasma porous structure with hot spot structure according to any one of claims 1 to 5;

[0043] Among them, in st...

Embodiment 1

[0047] As a specific embodiment, the present invention provides a method for preparing a plasma porous structure with a hot spot structure;

[0048] Step 1: Immerse the silicon (100) substrate in an analytically pure acetone solution for 5 minutes, then remove the silicon (100) substrate from the analytically pure acetone solution and wash it in absolute ethanol for 5 minutes, and place the silicon (100 ) the substrate is taken out from the absolute ethanol solution and soaked in deionized water for 5 minutes, then the silicon (100) substrate is taken out from the deionized water and blown dry with 99.5% nitrogen;

[0049] Step 2: Put the dried silicon (100) substrate into the magnetron sputtering coating equipment and perform the following operations: pump the magnetron sputtering coating equipment to a vacuum and then pass in argon gas, and magnetron sputtering coating The temperature of the equipment is controlled at 100°C, the pressure is controlled at 0.1Pa, the flow rate o...

Embodiment 2

[0053] As a specific embodiment, the present invention provides a method for preparing a plasma porous structure with a hot spot structure;

[0054] Step 1: Immerse the silicon (100) substrate in an analytically pure acetone solution for 10 minutes, then remove the silicon (100) substrate from the analytically pure acetone solution and wash it in absolute ethanol for 5 minutes, and place the silicon (100 ) the substrate is taken out from the absolute ethanol solution and soaked in deionized water for 5 minutes, then the silicon (100) substrate is taken out from the deionized water and blown dry with 99.5% nitrogen;

[0055] Step 2: Put the dried silicon (100) substrate into the magnetron sputtering coating equipment and perform the following operations: pump the magnetron sputtering coating equipment to a vacuum and then pass in argon gas, and magnetron sputtering coating The temperature of the equipment is controlled at 150°C, the pressure is controlled at 0.3Pa, the argon ga...

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Abstract

The invention discloses a plasma porous structure with a hotspot structure. The plasma porous structure includes a bearing base body and the plasma porous structure body deposited on the bearing basebody, a plurality of holes are formed in the plasma porous structure body, and at least parts of the multiple holes are connected through tough belts. The invention also discloses a preparation methodof the plasma porous structure. The preparation method specifically includes the following steps that a silicon wafer is washed and placed in deionized water to be soaked, and then the silicon waferis taken out and is blown with pure nitrogen to be dry; and the cleaned silicon wafer is fed into magnetron sputtering coating equipment, argon atmosphere is led in, the constant atmospheric pressureis maintained, then silver and tantalum element co-sputtering is carried out, and then the plasma porous structure with the hot spot structure can be prepared. By means of the preparation method, theplasma nanopore structure prepared by accurately regulating and controlling the deposition rate of silver and tantalum has the advantages of the higher hot spot density, the strong adsorption ability,the high surface roughness and the strong light transmission ability.

Description

technical field [0001] The invention belongs to the field of optical nanometer films, in particular to a plasma porous structure with a hot spot structure, and also to a preparation method of the plasma porous structure. Background technique [0002] When the surface of the noble metal nanostructure is excited by light, the local surface plasmon resonance effect can be generated in a certain spatial region, which will significantly amplify the electromagnetic field intensity in the local area of ​​the nanostructure, thereby forming a "hot spot". At present, the "hot spots" of a large number of studies are mainly "nano-gap" and "nano-needle" structures. Nanopores are a new type of "hot spot" structures that are less studied. has received widespread attention. Nanohole arrays exhibit a light-transport phenomenon with an extremely large light-transmitting capacity at specific wavelengths. Due to the dual effects of strong light transmission and localized surface plasmon reson...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16
CPCC23C14/165C23C14/352
Inventor 陈东圳张宇张萌付涛贺辛亥宋忠孝
Owner XI'AN POLYTECHNIC UNIVERSITY
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