A sic MOSFET short-circuit detection and protection system and method without detection blind zone

Abstract

The invention relates to a SiC MOSFET short-circuit detection protection system without non-detection zone and a method thereof. The SiC MOSFET short-circuit detection protection system without the non-detection zone and method are designed by combining the traditional di / dt short-circuit detection method and a VDS short-circuit detection method. A power device SiC MOSFET is free from the short-circuit non-detection zone in the whole running process, the short-circuit fault can be quickly detected and judged, the short-circuit time borne by the power device is shortened, so that the running ofelectric-electronic equipment can be more reliable. Switching frequency of the power device SiC MOSFET is comparatively fast, and the sustained short-circuit time is comparatively short and usually less than 3-5 microseconds. Through the method disclosed by the invention, a fault signal can be detected within 1-2 microsecond, and the turn-off protection can be executed, thereby preventing the power device and system from being damaged. The method further can be extended and applied to the Si-based IGBT device application occasion.

Description

technical field [0001] The invention relates to the technical field of power electronics and current conversion, in particular to a SiC MOSFET short-circuit detection and protection system and method without a detection blind zone. Background technique [0002] As a new type of semiconductor switching device, the power device SiC MOSFET is widely used in power conversion equipment such as solar inverters, charging piles, and traction converters. With the rapid development of SiC MOSFET power devices, and in order to ensure the safe and reliable operation of power devices, the drivers that switch and protect them have also been developed rapidly. Therefore, the design of SiC MOSFET drive protection circuits is particularly important. Among the many protection types of SiC MOSFETs, short-circuit protection is the most important. When a short-circuit fault occurs, the device needs to be turned off quickly and safely, otherwise it will cause damage to the device. At present, th...

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Problems solved by technology

However, this method also has certain shortcomings. After the device is turned on, the drain-source voltage V DS The short-circuit detection starts after the voltage drops to saturation, otherwise it will cause short-circuit protection malfunction

Therefore the drain-source voltage V DS If a fault occurs during the period before the saturation voltage drops, it cannot be detected, and there is a detection blind zone

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