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Silicon premelting method for evaporation plating

A pre-melting, silicon block technology, used in vacuum evaporation plating, sputtering plating, ion implantation plating, etc., can solve the problems of silicon collapse, product scrap, evaporation rate difficulties, etc., to improve the yield and ensure heat. Consistent, reduced silicon chipping effect

Inactive Publication Date: 2019-12-10
潍坊华光光电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the packaging process of semiconductor lasers, the laser needs to be coated to improve the light output efficiency and protect the laser. Silicon evaporation is often used in the coating process, but controlling the evaporation rate of silicon is a major difficulty in the prior art. It is easy to cause silicon collapse during the silicon evaporation process, which will lead to the invalidation of the entire furnace product

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0061] It also includes the step of putting the crucible into an oven and baking at 200° C. for 60 minutes after step b), so as to ensure the dryness of the crucible during use.

Embodiment 2

[0063] The degree of vacuum when vacuuming in step c-1) is Torr- Torr, electron beam power is 10Kw, and holding time is 5 minutes, and electron beam power is 15Kw in step c-2), and holding time is 10 minutes, and electron beam power is 20Kw in step c-3), and holding time is 10 minutes, In step c-4), the electron beam power is 15Kw, and the holding time is 10 minutes; in step c-5), the electron beam power is 10Kw, and the holding time is 10 minutes; in step c-6), the cooling time is 20 minutes.

Embodiment 3

[0065] The degree of vacuum when vacuuming in step d-1) is Torr- Torr, the electron beam power is 10Kw, and the holding time is 5 minutes, and the electron beam power is 20Kw in the step d-2), and the holding time is 10 minutes, and the electron beam power is 30Kw in the step d-3), and the holding time is 10 minutes, In step d-4), the electron beam power is 20Kw, and the holding time is 10 minutes; in step d-5), the electron beam power is 10Kw, and the holding time is 10 minutes; in step d-6), the cooling time is 20 minutes.

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PUM

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Abstract

A silicon premelting method for evaporation plating comprises the following steps of (a) polishing the surface of a crucible, performing flushing with deionized water after polishing, and performing washing with absolute ethyl alcohol after flushing; (b) performing blow drying on the crucible with nitrogen; (c) performing incipient melting operation; (d) performing remelting operation; and (e) performing final melting operation. One third of monocrystalline silicon is added every time in the step of incipient melting, the step of remelting and the step of final melting, thus guaranteeing thatthe monocrystalline silicon can be evenly heated during melting of every time; the melting process of every time is a process of secondary heating and secondary cooling, so that silicon splashing problem during evaporation of the monocrystalline silicon is effectively solved, and the rate of finished product is increased; the electron beam scanning area during remelting is increased in comparisonwith that during incipient melting, and meanwhile, the electron beam power in the heating process of remelting is also increased in comparison with that in the heating process of incipient melting, thus guaranteeing that monocrystalline silicon briquettes per unit mass are consistent in heat; and the electron beam power in the heating process of final melting is increased in comparison with that in the heating process of remelting so as to also guarantee that the monocrystalline silicon briquettes per unit mass are consistent in heat.

Description

technical field [0001] The invention relates to the technical field of semiconductor laser packaging, in particular to a silicon premelting method for evaporation. Background technique [0002] In the packaging process of semiconductor lasers, the laser needs to be coated to improve the light output efficiency and protect the laser. Silicon evaporation is often used in the coating process, but controlling the evaporation rate of silicon is a major difficulty in the prior art. It is easy to cause silicon collapse during the silicon evaporation process, which will lead to the failure of the entire furnace product. Contents of the invention [0003] In order to overcome the deficiencies of the above technologies, the present invention provides a silicon pre-melting method for vapor deposition that can effectively reduce silicon avalanche and splash and improve yield. [0004] The technical scheme that the present invention overcomes its technical problem adopts is: [0005]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/24C23C14/14
CPCC23C14/14C23C14/24
Inventor 周莉汤庆敏刘存志任忠祥徐现刚
Owner 潍坊华光光电子有限公司
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