Quartz crucible and preparation method thereof

Abstract

The invention discloses a quartz crucible and a preparation method thereof. The quartz crucible includes a crucible main body, and a bubble layer and a transparent layer which are sequentially arranged on the inner wall of the crucible main body; and the transparent layer includes an upper transparent subsection located above a tail bar adding liquid level line and a lower transparent subsection arranged below the tail bar adding liquid level line, the total thicknesses of the bubble layer and the transparent layer on the horizontal line of the crucible main body are equal, the upper transparent subsection is connected with the lower transparent subsection at the tail bar adding liquid level line, and the thickness of the upper transparent subsection is greater than the thickness of the lower transparent subsection. Because a silicon solution at the liquid level line reacts violently with the crucible wall, by relatively thickening the thickness of the transparent layer at the liquid level line, the possibility that the transparent layer is corroded and damaged when the silicon solution is in a high temperature region for a long time is avoided, the silicon solution is prevented from entering the bubble layer, impurities in the bubble layer are prevented from entering the silicon solution, the whole-bar rate of crystal bars in the crystal pulling process is improved, the quality is improved, and the costs of preparing single crystals are reduced.

Description

technical field [0001] The invention relates to the technical field of crystalline silicon manufacturing, in particular to a quartz crucible and a preparation method thereof. Background technique [0002] Whether it is chip manufacturing or solar cell preparation, monocrystalline silicon is required, and the production cost of monocrystalline silicon directly affects its use cost. [0003] There are many methods for preparing single crystal silicon, such as Czochralski method and zone melting method. Since the Czochralski method can be used to prepare large-sized silicon wafers and has higher efficiency, the Czochralski method is generally used to prepare monocrystalline silicon. The translucent quartz crucible made by the arc method is an essential basic material for pulling large-diameter single crystals by the Czochralski method. The quartz crucible is divided into two layers, the outside is a layer with high bubble density, called the bubble layer, and the inside is a ...

AI Technical Summary

Problems solved by technology

[0005] When pulling a single crystal, it is often used to re-dosing the silicon material multiple times to increase the service life of the crucible and save costs. However, the transparent layer near the crucible liquid level line will be severely corroded by the silicon solution due to multiple re-dosing.

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