High voltage wide input range Gan power module for new energy power generation system

Abstract

The invention relates to a high voltage wide input range Gan power module for a new energy power generation system. The Gan power module includes an input filter module, a GaN power factor correctionmodule and a GaN half-bridge LLC converter module which are sequentially connected, wherein an input high voltage bus Vin+ and an input high voltage ground wire Vin- are connected with the input filter module, an input high voltage bus DC is obtained through the input filter module, power factor correction of the input of the input high voltage bus DC obtained by the input filter module is performed by the power factor correction module to obtain a PFC high voltage bus Vbus and PFC low voltage bus Vgnd output, and DC/DC conversion of the output of the GaN power factor correction module is performed by the GaN half bridge LLC converter module to obtain an output high voltage bus Vout+ and an output low voltage bus Vout-. The Gan power module is advantaged in that by guaranteeing that a GaNdevice operates in a safe area state, high frequency and miniaturization of a power module are achieved, high density power integration and high efficiency are guaranteed, and the Gan power module canbe widely used in new energy generation systems.

Description

technical field [0001] The invention relates to a high-voltage and wide-input range GaN power module used in a new generation of new energy power generation system, belonging to the field of power electronics. Background technique [0002] In the 21st century, driven by emerging industries such as smart grids, mobile communications, and new energy vehicles, power electronics application systems require further improvement of system efficiency, miniaturization, and increased functionality, especially requiring circuit applications in terms of size, quality, power, and efficiency. trade-offs, such as server power management, battery chargers, and microinverters for solar farms. The above applications require the power electronic system to have high power density (>500W / in 3 , namely 30.5W / cm 3 ), high specific power (10kW / lb, 22kW / kg) and high total load point (>1000W). With the emergence and popularization of super-junction MOSFETs and insulated gate bipolar transist...

AI Technical Summary

Problems solved by technology

[0005] However, to improve the power density by increasing the switching frequency, we need to face two bottleneck problems: one is that the current of the switching branch changes very rapidly and the di / dt is very high during the switching process of the GaN device. Parasitic inductance, when the current changes rapidly, can generate high spike overvoltage across the switching device

If the wiring is not optimized enough and the parasitic inductance is large, it will directly affect the normal operation of the circuit

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