Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

CMOS image sensor, image processing method and storage medium

An image sensor and pixel technology, which is applied in the field of image processing and can solve the problems of low pixel density and low pixel unit arrangement density of CMOS image sensors.

Pending Publication Date: 2019-10-25
GUANGDONG OPPO MOBILE TELECOMM CORP LTD
View PDF10 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

like figure 1 As shown, a PD structure can be set in each square pixel unit, and the square pixel units are arranged in a quadrangular array, and the pixel units in the positive direction are used to absorb the corresponding RGB monochromatic light, so that the arrangement density of the pixel units is relatively low. Low, which in turn leads to low pixel density of the CMOS image sensor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CMOS image sensor, image processing method and storage medium
  • CMOS image sensor, image processing method and storage medium
  • CMOS image sensor, image processing method and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The embodiment of the present application provides a CMOS image sensor, such as figure 2 As shown, the CMOS image sensor includes:

[0036] A triangular pixel unit arranged in a hexagonal array, the triangular pixel unit is provided with a photodiode PD column, and the triangular pixel unit absorbs RGB monochromatic light by using the PD column, and converts the corresponding optical signal into an electrical signal;

[0037] The CMOS pixel readout circuit connected to the triangular pixel unit is used to amplify the electrical signal and read out the electrical signal.

[0038] A CMOS image sensor provided in an embodiment of the present application is suitable for collecting optical signals and performing image processing on the collected optical signals to obtain images corresponding to the optical signals.

[0039] In the embodiment of the present application, the CMOS image sensor is composed of a pixel unit circuit and a CMOS circuit, wherein the pixel unit circ...

Embodiment 2

[0071] An embodiment of the present application provides an image processing method, which is applied to a CMOS image sensor composed of triangular pixel units arranged in a hexagonal array and a CMOS pixel readout circuit. The triangular pixel units are provided with photodiode PD columns, such as Figure 6 As shown, the method includes:

[0072] S101. Use the PD column to absorb RGB monochromatic light, and convert the corresponding optical signal into an electrical signal.

[0073] An image processing method provided in an embodiment of the present application is applicable to a scenario where a CMOS image sensor is used to collect an optical signal, and the collected optical signal is subjected to image processing to obtain an image corresponding to the optical signal.

[0074] In the embodiment of the present application, the CMOS image sensor is composed of a pixel unit circuit and a CMOS circuit, wherein the pixel unit circuit is used to convert the collected optical si...

Embodiment 3

[0098]An embodiment of the present application provides a storage medium on which a computer program is stored. The computer-readable storage medium stores one or more programs. The one or more programs can be executed by one or more processors and applied to pixel In the unit circuit, the computer program realizes the image processing method described in the second embodiment.

[0099] Specifically, when the program instructions corresponding to an image processing method in this embodiment are read or executed by an electronic device, the following steps are included:

[0100] Use the PD column to absorb RGB monochromatic light, and convert the corresponding optical signal into an electrical signal;

[0101] The electrical signal is amplified by the CMOS pixel readout circuit, and the electrical signal is read out.

[0102] In the embodiment of the present invention, further, the hexagonal array of the triangular pixel units is arranged such that six triangular pixel units ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The embodiment of the application provides a CMOS image sensor, an image processing method and a storage medium. The CMOS image sensor comprises triangular pixel units arranged in a hexagonal array and a CMOS pixel readout circuit connected with the triangular pixel units, wherein each triangular pixel unit is internally provided with a photodiode PD column and uses the photodiode PD column to absorb RGB monochromatic light and convert a corresponding optical signal into an electric signal, and the CMOS pixel readout circuit is used for amplifying and reading out the electric signals.

Description

technical field [0001] The present application relates to the field of image processing, in particular to a CMOS image sensor, an image processing method, and a storage medium. Background technique [0002] Commonly used pixel arrays are mainly arranged with square pixels, and the pixels have a square structure, and the horizontal and vertical periods are also the same. [0003] In the prior art, a photodiode (PhotoDiode, PD) structure may be arranged in a square pixel unit in a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) image sensor for light absorption and photoelectric conversion. Such as figure 1 As shown, a PD structure can be set in each square pixel unit, and the square pixel units are arranged in a quadrangular array, and the pixel units in the positive direction are used to absorb the corresponding RGB monochromatic light, so that the arrangement density of the pixel units is relatively low. Low, which in turn leads to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/374
CPCH01L27/14605H01L27/14607H04N25/76
Inventor 杨鑫
Owner GUANGDONG OPPO MOBILE TELECOMM CORP LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com