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Lanthanum and titanium co-doped bismuth ferrite membrane and preparation method thereof

A thin-film preparation, bismuth ferrite technology, applied in the coating and other directions, to achieve the effects of high remanent polarization, short annealing time, and simple operation

Active Publication Date: 2019-10-11
NEW MATERIAL INST OF SHANDONG ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at the deficiencies in the field of BFO film preparation in the prior art, and provides a bismuth ferrite film co-doped with lanthanum and titanium and a preparation method thereof, thereby solving the problem of leakage current and improving the electrical properties of the film

Method used

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  • Lanthanum and titanium co-doped bismuth ferrite membrane and preparation method thereof
  • Lanthanum and titanium co-doped bismuth ferrite membrane and preparation method thereof
  • Lanthanum and titanium co-doped bismuth ferrite membrane and preparation method thereof

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Embodiment 1

[0026] A bismuth ferrite thin film co-doped with lanthanum and titanium was prepared by sol-gel and bonding layer-by-layer annealing process （1+Z）(1 –Y) La Y Fe 1-X Ti X o 3 (BLTO), that is, the ratio of each element is Bi:La:Fe:Ti:O=(1+Z)(1 –Y):Y:(1-X):X:3, the film has 10 layers in total, Each layer thickness is 100nm; Among the present invention, bismuth source, lanthanum source, iron source, titanium source are respectively bismuth nitrate, lanthanum nitrate, ferric nitrate, tetrabutyl titanate, and wherein X is the molar equivalent 0.10 of Ti element, and Y is La The molar equivalent of the element is 0.10, the element Bi is added in excess, Z is the excess percentage of Bi by weight, Z is 13% in the first to third layers, Z is 3% in the fourth to seventh layers, and the eighth layer Z is 9% in the 10th floor.

[0027] The preparation method of this thin film comprises the following steps:

[0028] 1. Preparation of precursor solution: by sol-gel method, respectivel...

Embodiment 2

[0032] A bismuth ferrite thin film co-doped with lanthanum and titanium was prepared by sol-gel and bonding layer-by-layer annealing process （1+Z）(1 –Y) La Y Fe 1-X Ti X o 3 (BLTO), that is, the ratio of each element is Bi:La:Fe:Ti:O=(1+Z)(1 –Y):Y:(1-X):X:3, the film has 12 layers in total, Each layer thickness is 110nm; Among the present invention, bismuth source, lanthanum source, iron source, titanium source are respectively bismuth nitrate, lanthanum nitrate, ferric nitrate, tetrabutyl titanate, and wherein X is the molar equivalent 0.01 of Ti element, and Y is La The molar equivalent of the element is 0.05, the element Bi is added in excess, Z is the excess percentage of Bi by weight, Z is 11% in the first to third layers, Z is 5% in the fourth to ninth layers, and the tenth layer Z is 10% to the 12th floor.

[0033] The preparation method of this thin film comprises the following steps:

[0034]1. Preparation of precursor solution: by sol-gel method, respectively w...

Embodiment 3

[0038] A bismuth ferrite thin film co-doped with lanthanum and titanium was prepared by sol-gel and bonding layer-by-layer annealing process （1+Z）(1 –Y) La Y Fe 1-X Ti X o 3 (BLTO), that is, the ratio of each element is Bi:La:Fe:Ti:O=(1+Z)(1 –Y):Y:(1-X):X:3, the film has 8 layers in total, Each layer thickness is 120nm; Among the present invention, bismuth source, lanthanum source, iron source, titanium source are respectively bismuth nitrate, lanthanum nitrate, iron nitrate, tetrabutyl titanate, and wherein X is the molar equivalent 0.03 of Ti element, Y The molar equivalent of the La element is 0.07, the element Bi is added in excess, Z is the excess percentage of Bi by weight, Z is 12% in the first to third layers, Z is 4% in the fourth to fifth layers, and Z is 4% in the fourth to fifth layers. Z is 9.5% in the 6th floor to the 8th floor.

[0039] The preparation method of this thin film comprises the following steps:

[0040] 1. Preparation of precursor solution: by...

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Abstract

The invention belongs to the technical field of inorganic functional membrane materials, and relates to a lanthanum and titanium co-doped bismuth ferrite membrane and a preparation method thereof. A sol-gel process and a layer-by-layer annealing process are combined to prepare the lanthanum and titanium co-doped bismuth ferrite membrane Bi(1+Z)(1-Y)LaYFe1XTiXO3(BLTO), wherein the ratios among theelements Bi, La, Fe, Ti and O is (1+Z)(1-Y):Y:(1-X):X:3, the membrane is provided with N layers, N is not smaller than 8 and not larger than 12, and each layer is 100-130 nanometers in thickness. By the aid of the preparation method, a stable and uniform precursor solution can be obtained, and by cooperating with the layer-by-layer annealing process, the prepared membrane is low in leakage currentand high in remanent polarization.

Description

technical field [0001] The invention belongs to the technical field of inorganic functional thin film materials, and in particular relates to a bismuth ferrite thin film co-doped with lanthanum and titanium and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of industries such as microelectromechanical systems (MEMS), sensors and random access memories, thin film materials with excellent ferroelectric and piezoelectric properties have become one of the hotspots in the current research field. BiFeO 3 (BFO) thin films have attracted widespread attention due to their excellent piezoelectric and ferroelectric properties, and have become a class of lead-free ferroelectric and environmentally friendly materials comparable to lead-based materials. However, in order to make the film applicable to future devices, two major problems of the film must be solved: electric leakage and low remnant polarization. It is reported that t...

Claims

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Application Information

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IPC IPC(8): C03C17/34
CPCC03C17/3417C03C2217/231C03C2217/242C03C2218/113C03C2218/116C03C2218/32
Inventor 邱程程王旭平吕宪顺张园园杨玉国吴丰年魏磊张华迪
Owner NEW MATERIAL INST OF SHANDONG ACADEMY OF SCI
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