Nonvolatile memory erase control method capable of prolonging service life

A non-volatile, erasing control technology, applied in the direction of static memory, read-only memory, information storage, etc., can solve the problems of flash storage unit and chip not working properly, so as to increase the service life and ensure correct operation. performance and increase the overall service life

Inactive Publication Date: 2019-10-08
SHANGHAI HUAHONG INTEGRATED CIRCUIT
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  • Summary
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Flash has a limit on the maximum number of erasing times. When the maximum number of erasing times is exceeded, the corresponding flash storage unit will not work normally.
At this time, if the chip continues to use the flash storage unit, the entire chip will not work properly

Method used

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  • Nonvolatile memory erase control method capable of prolonging service life

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Embodiment Construction

[0012] Below in conjunction with accompanying drawing and specific embodiment the present invention is described in further detail:

[0013] figure 1 Shown is a non-volatile memory erasing control circuit, including: erasing operation main control circuit, erasing mode selection circuit, read control and comparison circuit, memory interface control circuit.

[0014] When the system wants to erase non-volatile memory, complete the following:

[0015] The software configuration uses multi-pulse erase and enables enhanced reading, and then the software initiates an erase operation request; the master

[0016] The control circuit receives the erase enable control, the address of the block to be erased, and stops the cpu clock to allow it to enter the hold mode;

[0017] The erasing mode selection circuit initiates a multi-pulse erasing request to the non-volatile memory according to the software configuration;

[0018] After the multi-pulse erase operation is completed, the rea...

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Abstract

The invention discloses a software and hardware combined nonvolatile memory erasure control method capable of prolonging the service life. The method comprises the steps that first, a software is configured with and uses the multi-pulse erasure and enables the enhanced reading; then, the system initiates a request for erasing a nonvolatile memory, the hardware suspends the CPU clock, and the execution of other instructions is prevented; and after the erasing process is completed, the hardware reads the data of the erasing block by using a more strict standard, judges whether the erasing is successful, and informs the software of an erasing result flag bit; if the erase is successful, the CPU clock is turned on, and the subsequent instruction operation is executed continuously; if the erasefails, the software initiates a second erase instruction operation until the correct data is read; if the continuous N times of multi-pulse erase fails, the (N + 1)-th software enables the normal reading, and the data of the erase block is read; if the continuous N times of multi-pulse erase is successful, it is considered that the erase succeeds, otherwise, the erase process fails, wherein N canbe preset. According to the present invention, the service life of the nonvolatile memory can be effectively prolonged.

Description

technical field [0001] The invention relates to the field of non-volatile memory, relates to a non-volatile memory erasing control method based on an SOC system, in particular to a non-volatile memory erasing control circuit. . Background technique [0002] For smart card chips, non-volatile memory such as flash memory is essential. The performance of non-volatile memory will decrease with the increase of erasing times, and the degree of performance deterioration will be reflected in the time and current required for erasing, that is, the memory cells will go through such a process. First of all, it can be written with normal current and time; then, it needs to be written with a large current and a long time; finally, the writing is unsuccessful. [0003] Flash has a limit on the maximum number of erasing times. When the maximum number of times of erasing is exceeded, the corresponding flash storage unit will not work normally. At this time, if the chip continues to use t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/16G06F3/06
CPCG06F3/0616G06F3/0652G06F3/0679G11C16/16
Inventor 顾秋萍刘曙斌舒海军赵贵勇
Owner SHANGHAI HUAHONG INTEGRATED CIRCUIT
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