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Perovskite film forming process

A perovskite and film-forming technology, applied in the field of perovskite solar cells, can solve the problems of reducing film-forming quality, film damage, and scratching head hardness, and achieve the effects of avoiding film damage, efficient preparation, and accurate film thickness regulation.

Pending Publication Date: 2019-09-27
ZHEJIANG ZHENENG TECHN RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the leveling method is greatly affected by the amount of liquid, and can only guarantee the film thickness to a certain extent, and cannot achieve precise control. Although the scrape coating can achieve precise control by adjusting the distance between the scraper head and the substrate, the quality of the scraper head Therefore, it is of great significance to find a perovskite large-area film-forming process that is non-damaging and can precisely control the film thickness.
[0003] For the current large-area perovskite film-forming methods, the flow-flow method and the scraping method have achieved good results, but there are still some technical problems, mainly as follows: in the large-area film-forming process, the film thickness is uniform How to ensure consistency
The hard scraper will cause a certain degree of damage to the film, reducing the quality of the film

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Example 1 A polyimide film (PI) with an area of ​​1cm*1cm is softly covered with a brush film, the substrate area is 1cm*10cm, and a volume of 50 μL of perovskite precursor solution is dripped on the leftmost edge of the substrate , the precursor component is PbI 2 The molar ratio of MAI and MAI is 1.07:1, and the PI film is brushed at a slow and uniform speed, and the speed of brushing the film is adjusted to be 2mm / s constant, so that the precursor solution can be uniformly covered on the substrate. quality perovskite films.

Embodiment 2

[0021] Embodiment 2 uses the soft film with hydrophobic precursor liquid performance to be used for soft covering brush film, and area is 5cm*5cm, and substrate area is 10cm*10cm, and precursor liquid component is PbI 2 The molar ratio of MAI and MAI is 1.07:1, drop 100 μL of precursor solution on the substrate, and brush the film at a speed of 0.5mm / s-2mm / s to brush the film at a variable speed. The obtained precursor solution can evenly cover the substrate, and anneal at 140°C for 15 minutes A uniform high-quality perovskite film is obtained.

Embodiment 3

[0022] Example 3 The hydrophobic soft film and the hydrophilic soft film are respectively used in the same precursor solution, and the precursor solution component is PbI 2 With a molar ratio of 1.07:1 to MAI, take the same volume of 20 μL and drop it on a 1mm*1mm substrate. The brushing rate is 2mm / s, and the annealing time is 10min. Perovskite crystals with different crystal sizes and film properties are prepared. film.

[0023] soft cover film Surface Roughness of Perovskite Films Cracks on the surface of the perovskite film Parafilm Small less PI film larger more

[0024] Specific comparison such as figure 2 shown. figure 2 The picture on the left shows the annealed perovskite surface brushed out by the PI film at a size of 5 μm, with large roughness and many cracks. figure 2 The picture on the right shows the annealed perovskite surface brushed out by the parafilm at a size of 5 μm, with small roughness and fewer cracks.

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Abstract

The invention relates to a perovskite film forming process, which comprises steps: 1) a precursor solution is taken to drip at one side of a substrate; 2) continuous and constant-speed dripping is carried out, the dripping rate is 0.1 mL / min to 10 mL / min, the dripping range is along a straight line at one side of the substrate until the precursor solution completely and linearly covers the edge of one side of the substrate; 3) a soft film suitable for the above condition coats the precursor solution dripping side, the soft film is dragged by using a manipulator to brush the other side of the substrate, and a precursor solution uniformly coating the substrate is obtained; and 4) annealing is carried out under a condition of 0 to 300 DEG C, and the annealing time is 0 to 300 min. The perovskite film forming process has the beneficial effects that a film brush method with soft film covering is adopted, the effect of accurately adjusting the film thickness is achieved through effects of a shearing force, film damage possibly caused by a hard scraping head can be avoided, and efficient preparation of perovskite large area film formation is further realized, and an important role is played in large-scale industrialized promotion of perovskite.

Description

technical field [0001] The invention relates to the field of perovskite solar cells, more specifically, it relates to a perovskite film-forming process. Background technique [0002] Efficient preparation of large-area uniform thin films has always been an important issue in the field of perovskite batteries. Technical issues such as the size of the thin film area, precise control of film thickness uniformity, and raw material utilization have been widely concerned. For the large-area film formation of liquid precursors, the current common methods mainly include flow-down method and scrape coating method, and the thickness of the film is often adjusted by adjusting the amount of fluid or the distance between the scraper head and the substrate. However, the leveling method is greatly affected by the amount of liquid, and can only guarantee the film thickness to a certain extent, and cannot achieve precise control. Although the scrape coating can achieve precise control by adj...

Claims

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Application Information

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IPC IPC(8): H01L51/48
CPCH10K71/13H10K71/15
Inventor 寿春晖盛江闫锦叶继春闫宝杰姜二帅李楠丁莞尔沈曲
Owner ZHEJIANG ZHENENG TECHN RES INST
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