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Method and system for accurately regulating and controlling state of nonvolatile memory unit

A technology of non-volatile storage and storage unit, which is applied in the field of semiconductor storage and can solve problems such as limited storage capacity

Active Publication Date: 2019-08-27
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when this kind of NAND memory string was first proposed, each memory cell could only store one bit of data, and its achievable storage capacity was still limited.

Method used

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  • Method and system for accurately regulating and controlling state of nonvolatile memory unit
  • Method and system for accurately regulating and controlling state of nonvolatile memory unit
  • Method and system for accurately regulating and controlling state of nonvolatile memory unit

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Embodiment Construction

[0046] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0047] The non-volatile memory unit realizes the storage of data in the form of storing electrons, and realizes the storage of different data through different stored charges. For a storage unit with multi-valued storage capability, there are multiple (≥4) storage states. The more storage states, the greater the storage density, which is more conducive to the realization of large-capacity data s...

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Abstract

The invention discloses a method and system for accurately regulating and controlling the state of a nonvolatile memory unit and belongs to the technical field of semiconductor storage, and the methodcomprises the steps: (1) determining a target threshold voltage range [Vmin, Vmax] according to a target data state; (2) reading the threshold voltage Vread of a storage unit; if the Vread belongs to[Vmin, Vmax], indicating that state regulation is successful, and concluding operation; if Vread is greater than Vmax, entering the step (3); if Vread is smaller than Vmin, executing the step (5); (3) executing erasing operation on the storage unit, and turning to the step (4); (4) reading the threshold voltage Vread 2 of the storage unit; if Vread 2 is larger than Vmin, indicating that state regulation fails, and concluding operation; otherwise, turning to the step (2); (5) applying programming pulses to the storage unit, adjusting the programming pulses in the mode that the width and the amplitude are gradually increased till the threshold voltage of the storage unit is larger than or equal to the lower bound Vmin of the target threshold voltage range, and then exuecting the step (2). According to the invention, the state of the nonvolatile memory unit can be accurately regulated and controlled.

Description

technical field [0001] The invention belongs to the technical field of semiconductor storage, and more specifically relates to a method and system for precisely regulating the state of a nonvolatile storage unit. Background technique [0002] Traditional flash memory (Flash) arranges storage cells (Cells) in a plane, so it is also called planar flash memory or 2D flash memory. With the rapid development of flash memory manufacturing technology, the manufacturing process of flash memory has been continuously reduced. From the initial development of 50nm level to the current 10nm level, the capacity of flash memory chips has also increased rapidly. However, due to the physical characteristics of the storage unit, the increase in chip density is not unlimited. After a certain level, simply shrinking the manufacturing process can no longer bring advantages, so it is difficult to further reduce the price of flash memory per unit storage capacity. In response to the above problem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34G11C16/10G11C16/14
CPCG11C16/10G11C16/14G11C16/3404
Inventor 缪向水闫鹏童浩
Owner HUAZHONG UNIV OF SCI & TECH
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