NOR-FLASH data storage method, computer device and storage medium

Abstract

The invention discloses an NOR-FLASH data storage method, a computer device and a storage medium. The NOR-FLASH is divided into a control region and a user region, and the method comprises the following steps of applying for writing the sector data into an idle mapping sector from the user region according to a dirty bitmap; updating the dirty bitmap, a recovery bitmap and a dynamic mapping table;writing the mapping relation between a logical sector number and a mapping sector number into a log area, wherein if the log area is full before writing, the dynamic mapping table is backed up to thestatic mapping table, and the log area is erased. According to the NOR-FLASH data storage method, the computer device and the storage medium provided by the invention, by setting the dirty bitmap, the recovery bitmap and the dynamic mapping table, the sector of the NOR-FLASH is planned and managed, the limited abrasion uniformity of the sector in the NOR-FLASH is realized, and the service life ofthe NOR-FLASH can be prolonged; by setting the log records to record the data writing process and utilizing the static mapping table to back up the data of the dynamic mapping table, the data cannotbe lost when power failure occurs during data writing.

Description

technical field [0001] The invention relates to the technical field of data reading and writing, in particular to a NOR-FLASH data storage method, computer equipment and a storage medium. Background technique [0002] Usually we need to save the file data to the storage medium, and FLASH is often used as the storage medium in the embedded system. FLASH can be divided into two types according to its characteristics, NAND-FLASH and NOR-FLASH. The data access of NOR-FLASH has the following characteristics: [0003] (1) The access operation of NOR-FLASH is divided into erase / read / write; [0004] (2) The smallest data unit that can be manipulated by reading data is a byte, which can access any address on the NOR-FLASH; [0005] (3) NOR-FLASH is divided into several BLOCKs (64KB or larger), each BLOCK contains several SECTORs (4KB or 8KB), and each SECTOR contains several PAGEs (256 bytes); [0006] (4) Erase data Data is carried out according to SECTOR or BLOCK or even the en...

AI Technical Summary

Problems solved by technology

[0007] (5) The erasing life of each SECTOR / BLOCK of NOR-FLASH is about 100,000 times, and the erasing or writing operation on the SECTOR / BLOCK can no longer be performed after the erasing times are exceeded;

[0008] (6) The write operation can only change the data in the storage unit from 1 to 0, and cannot change from 0 to 1, so the write operation must first perform an erase operation on the SECTOR or BLOCK where the storage unit is located;

[0013] (1) When writing critical data (such as the FAT table of the FAT file system), if the power failure occurs immediately after erasing the data, the original data in the SECTOR / BLOCK will be lost and cannot be recovered, which will cause the entire file system to Damaged, and all data originally saved in NOR-FLASH is lost

[0014] (2) The modification frequency of some key data is extremely high (for example, the FAT table will be rewritten frequently), due to the limited erasing life of FLASH, it will cause accelerated aging of the storage area of ​​key data, which is greatly prioritized over other storage units. Greatly reduce the service life of FLASH

However, due to the access characteristics of NOR-FLASH, it often leads to data loss and product life reduction, which seriously affects product quality.

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