Nonvolatile memory and programming method thereof

A non-volatile memory technology, applied in the field of non-volatile memory and its programming, can solve the problems of large read window and read errors

Pending Publication Date: 2019-08-16
YANGTZE MEMORY TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, if each threshold voltage distribution is narrower, the corresponding distribution edge is larger, and the read ...

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  • Nonvolatile memory and programming method thereof
  • Nonvolatile memory and programming method thereof
  • Nonvolatile memory and programming method thereof

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Embodiment Construction

[0046] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0047] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0048] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

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Abstract

The present invention relates to a nonvolatile memory, comprising a memory cell array and a controller. The memory cell array comprises a plurality of memory cells. The controller is configured to apply a first programming signal to a first memory cell of the plurality of memory cells; verify whether the threshold voltage of the first memory cell reaches a first threshold voltage or not; when thevoltage of the first memory cell reaches a first threshold voltage, verify whether the threshold voltage of the first memory cell reaches a second threshold voltage, wherein the second threshold voltage is greater than the first threshold voltage; and when the threshold voltage of the first memory cell does not reach the second threshold voltage, apply a second programming signal to the first memory cell. The threshold voltage of the memory cell located on the lower boundary of the threshold voltage distribution is improved, so that the distribution of each programming state is narrower, the width of the reading window is increased, and the tolerance of the nonvolatile memory to the reduction of the reading window caused by charge loss is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a nonvolatile memory and a programming method thereof. Background technique [0002] The semiconductor memory may include a volatile memory (VM) and a nonvolatile memory (NVM). Volatile storage typically acts as a temporary storage medium, such as RAM, for an operating system or other running programs. Volatile memory cannot retain data when power is turned off. Non-volatile memory is used to store data that needs to be retained for a long time, such as a hard disk. Non-volatile memory retains data in the event of a sudden power loss or shutdown. Examples of non-volatile memory include flash memory (Flash memory), read-only memory ROM, or electrically erasable programmable read-only EEPROM, and the like. [0003] To program NAND flash memory, that is to apply different threshold voltages to the storage cells, so that different numbers of electrons can enter the ...

Claims

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Application Information

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IPC IPC(8): G11C16/34
CPCG11C16/3486
Inventor 刘红涛黄莹魏文喆李达
Owner YANGTZE MEMORY TECH CO LTD
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