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Method for analyzing latent track damage of GaN HEMT device caused by heavy ions

A sneak track and heavy ion technology, applied to instruments, special data processing applications, electrical digital data processing, etc., can solve problems such as single particle damage, severe, heavy ion damage, etc., achieve high results, high accuracy, and save energy The effect of time and cost

Pending Publication Date: 2019-08-16
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the space application of GaN HEMT devices faces the impact of irradiation from high-energy heavy ions in space. Although the space flux of heavy ions is low (only about 1%), due to the strong energy loss characteristics of high-energy heavy ions, its The possible single particle damage cannot be ignored; at the same time, because the GaN HEMT device is a high-voltage device, the heavy ion damage is more serious

Method used

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  • Method for analyzing latent track damage of GaN HEMT device caused by heavy ions
  • Method for analyzing latent track damage of GaN HEMT device caused by heavy ions
  • Method for analyzing latent track damage of GaN HEMT device caused by heavy ions

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Embodiment 1

[0044] The embodiment of the present invention discloses a method for analyzing sneak track damage of GaN HEMT devices caused by heavy ions, which specifically includes the following steps:

[0045] (1) Cut the GaN HEMT device longitudinally to obtain the material of each layer and its corresponding thickness, then input the obtained data into the SRIM software, and use the SRIM software to establish the geometric model of the GaN HEMT device;

[0046] (2) Use SRIM software to define the incident particles, the incident mode of the incident particles, and the physical process of the interaction between the incident particles and the GaNHEMT device;

[0047] (3) Using 802.4MeV Bi (bismuth) ions as the incident particles, use SRIM software to set the type, energy and direction of the incident particles, and then perform simulation calculations to obtain the latent track and ionization energy of the incident particles in the device Loss parameters.

[0048] Use SRIM to start vir...

Embodiment 2

[0067] The embodiment of the present invention discloses a method for analyzing sneak track damage of GaN HEMT devices caused by heavy ions, which specifically includes the following steps:

[0068] (1) Cut the GaN HEMT device longitudinally to obtain the material of each layer and its corresponding thickness, then input the obtained data into the SRIM software, and use the SRIM software to establish the geometric model of the GaN HEMT device;

[0069] (2) Use SRIM software to define the incident particles, the incident mode of the incident particles, and the physical process of the interaction between the incident particles and the GaNHEMT device;

[0070] (3) Use 256MeV I (iodine) ions as the incident particles, use SRIM software to set the type, energy and direction of the incident particles, and then perform simulation calculations to obtain the latent track and ionization energy loss of the incident particles in the device parameter.

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Abstract

The invention discloses a method for analyzing latent track damage of a GaN HEMT device caused by heavy ions. The method comprises the following steps of calculating an energy loss parameter of the heavy ions in the GaN material by using the SRIM and obtaining a latent track map caused by the energy loss parameter. The method can accurately, quickly and conveniently realize the effect of analyzingthe latent track damage of the GaN HEMT device caused by heavy ions, thereby providing a research basis for reducing the influence of high-energy heavy ion irradiation in space on the GaN HEMT device.

Description

technical field [0001] The invention relates to a numerical analysis method for heavy ion irradiation of semiconductor devices, which belongs to the field of anti-radiation reinforcement of semiconductor devices, and more specifically relates to a method for analyzing latent track damage of GaN HEMT devices caused by heavy ions. Background technique [0002] Gallium nitride (GaN), a wide bandgap semiconductor material, has become the third-generation semiconductor developed rapidly after silicon (Si) and gallium arsenide (GaAs) due to its good physical, chemical and electrical properties, especially the prepared AlGaN / GaN HEMT devices have super advantages in high-frequency, high-power, high-temperature and high-voltage applications, and due to the excellent radiation resistance of GaN materials, GaN HEMT devices have great potential in radiation environments such as satellites, space exploration, and nuclear reactors. application prospects. [0003] However, the space app...

Claims

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Application Information

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IPC IPC(8): G06F17/50
CPCG06F30/20
Inventor 郭红霞郝蕊静雷志锋琚安安郭维新钟向丽欧阳晓平秦丽李波潘霄宇董世剑
Owner XIANGTAN UNIV
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