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High temperature resistant flexible conductive material based on PEAK and preparation method thereof

A conductive material, high temperature flexible technology, applied to the conductive layer on the insulating carrier, equipment for manufacturing conductive/semiconductive layer, cable/conductor manufacturing, etc., can solve problems such as difficult to withstand high temperature, achieve good electrical conductivity, Easy to achieve mass production and simple preparation process

Inactive Publication Date: 2019-08-02
DALIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above-mentioned substrate materials have good properties, most polymeric substrate materials are difficult to withstand high temperatures above 200 °C due to their inherent thermodynamic and mechanical properties.

Method used

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  • High temperature resistant flexible conductive material based on PEAK and preparation method thereof
  • High temperature resistant flexible conductive material based on PEAK and preparation method thereof
  • High temperature resistant flexible conductive material based on PEAK and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The ITO glass was ultrasonically cleaned with deionized water, acetone, and ethanol solution for 20 minutes, and then the ITO conductive surface was blown dry with nitrogen. Put the cleaned ITO glass in AgNO 3 and NaNO 3 The electrochemical deposition is carried out by chronoamperometry in the mixed solution, the reference electrode is a saturated mercurous sulfate electrode, the counter electrode is platinum wire, and the working electrode is ITO glass. The deposition time is 3200s, and the AgNO in the electrolyte mixed solution used 3 The concentration is 0.02mol / L, NaNO 3 The concentration is 0.09mol / L, and the potential set by electrochemical deposition is -0.45V. The resulting sample was called ITO-Ag-1.

[0022] Place ITO-Ag-1 on a heating plate. A 10wt% PEAK polymer solution was prepared with NMP as a solvent, and the PEAK solution was uniformly drop-coated on the ITO-Ag-1. Set the temperature of the heating plate at 70°C and heat for 10 hours. After the so...

Embodiment 2

[0024] Example 2 PEAK-Ag high temperature performance test.

[0025] In order to characterize the high temperature resistance of the sample, the PEAK-Ag sample prepared by the aforementioned method was placed in a vacuum oven, the temperature was gradually raised, and it was stabilized for 10 minutes after rising to the set temperature. Sheet resistance is tested. The temperature has been raised from room temperature to 200°C to study the change law of the conductivity of the PEAK-Ag samples at different temperatures. like Figure 4 As shown, the sheet resistance of the sample has been kept at a low level from low temperature to high temperature, and the lowest can reach about 0.1 ohm, indicating that it has excellent electrical conductivity. When heated to about 200 degrees, although the resistance increases slightly, it still remains below 0.5 ohms, which fully proves that it has excellent heat resistance and still has good conductivity under high temperature conditions. ...

Embodiment 3

[0026] Example 3 PEAK-Ag hydrothermal oxidation resistance test.

[0027] In order to characterize the hydrothermal oxidation resistance of the sample, the PEAK-Ag sample prepared by the above method was placed in hot water at 90 °C, and the sample was taken out regularly to test its sheet resistance, and the change of the sheet resistance of the sample was studied as the heating time increased. The hydrothermal conditions can make the nano-silver conductive layer oxidize more violently, and the conductivity of most flexible conductive materials will decrease rapidly under hydrothermal conditions, and the sheet resistance will increase significantly. However by Figure 5 It can be seen that the sheet resistance of the PEAK-Ag sample prepared by the present invention hardly changes after being kept under hydrothermal conditions for 90 minutes, thus indicating that the sample has excellent hydrothermal oxidation resistance.

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Abstract

The invention relates to a high temperature resistant flexible conductive material based on PEAK and a preparation method thereof, and belongs to the technical field of electronic materials. The preparation method comprises the steps of carrying out electrochemical silver deposition on clean ITO glass by adopting a chronoamperometry method, wherein the applied electrolyte is a mixed solution of AgNO3 and NaNO3, the reference electrode is a saturated mercurous sulfate electrode, the counter electrode is a platinum wire, the working electrode is the ITO glass, and ITO-Ag is obtained after the electrochemical deposition; putting ITO-Ag on a heating plate with the nano silver conductive layer facing upward, preparing a PEAK solution, dispensing or spinning the PEAK solution on the surface of the nano silver conductive layer, heating to volatilize the solvent so as to obtain PEAK-Ag. The bonding degree of the PEAK substrate and the nano silver conductive layer can be adjusted through controlling the film formation conditions so as to prepare a material with the nano silver conductive layer being embedded into the PEAK structure. The structure can make full use of the heat resistance ofPEAK, thereby effectively protecting nano silver, enabling nano silver not to be oxidized easily under the high temperature condition, and maintaining the good conductivity.

Description

technical field [0001] The invention relates to the technical field of electronic materials, in particular to a high-temperature-resistant flexible conductive material based on PEAK and a preparation method thereof. Background technique [0002] With the advancement of science and technology and the development of the times, more and more electronic devices are developing in the direction of flexibility. Flexible electronic devices refer to devices that are flexible and can maintain stable performance when deformed. In recent years, flexible devices have been extensively studied in many fields. In the field of biomedicine, the applications of flexible devices mainly include wearable medical devices and implantable human body devices. Compared with traditional inorganic semiconductor materials such as silicon wafers, flexible implantable and wearable devices use biomimetic polymer films as substrates, which reduce the thickness and weight of the device, are more compatible ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14C25D3/46C25D5/54
CPCC25D3/46C25D5/54H01B5/14H01B13/0026
Inventor 李秀平王小仪那兆霖刘程刘文韬
Owner DALIAN UNIV
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