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Schottky diode model parameter calibration method

A technology of Schottky diodes and model parameters, applied in special data processing applications, electrical digital data processing, instruments, etc., can solve problems such as high technical threshold, inconvenient use, complexity, etc., achieve low technical threshold and ensure the accuracy of results , saving the effect of research calculations

Active Publication Date: 2019-08-02
湖南德雅坤创科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the model parameter calibration process of Schottky diodes in the prior art is generally too complicated. For general circuit designers who do not have device process knowledge, the technical threshold of model parameter calibration is high, which is not easy to use.

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  • Schottky diode model parameter calibration method
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  • Schottky diode model parameter calibration method

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Embodiment Construction

[0036] The core of the present application is to provide a method for calibrating model parameters of Schottky diodes which is convenient and simple, and has a low technical threshold.

[0037] In order to describe the technical solutions in the embodiments of the present application more clearly and completely, the technical solutions in the embodiments of the present application will be introduced below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0038] The embodiment of the present application discloses a model parameter calibration method of a Schottky diode, referring to figure 1 As shown, the method mainly includes the follow...

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Abstract

The invention discloses a Schottky diode model parameter calibration method. The method comprises the steps of obtaining a test curve of a forward current-voltage characteristic of a Schottky diode; determining a calibration value of a core parameter and an empirical initial value of an auxiliary parameter in a preset Schottky diode model; wherein the core parameter is a model parameter influencing the change trend of the forward current-voltage characteristic, and the auxiliary parameter is a model parameter influencing the change precision of the forward current-voltage characteristic; adjusting and obtaining an adjusting value of the auxiliary parameter; substituting the calibration value of the core parameter and the adjustment value of the auxiliary parameter into a preset Schottky diode model; obtaining a simulation curve of the forward current-voltage characteristic; judging whether the fitting error of the simulation curve and the test curve is smaller than a preset threshold value or not; if yes, determining the adjustment value of the auxiliary parameter as a calibration value of the auxiliary parameter; and if not, continuing to execute the step of adjusting and obtaining the adjustment value of the auxiliary parameter. The method is simple and easy to implement, low in technical threshold and convenient to use.

Description

technical field [0001] The present application relates to the technical field of power electronics, in particular to a model parameter calibration method of a Schottky diode. Background technique [0002] Schottky diodes, especially silicon carbide (SiC) Schottky diodes, are commonly used power devices in power electronic systems. Silicon carbide Schottky diodes have the advantages of fast switching speed, large reverse voltage value, and high temperature resistance, and occupy an important position in market applications. Therefore, relevant circuit designers often need to use Schottky diode models to use Schottky diode models. The relevant application circuit of the diode is designed or improved. However, the model parameter calibration process of Schottky diodes in the prior art is generally too complicated. For general circuit designers who do not have device process knowledge, the technical threshold of model parameter calibration is high and it is not easy to use. In...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/367
Inventor 李建成陈一平李乐乐陈亮
Owner 湖南德雅坤创科技有限公司
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