Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of NiO hole transporting layer of perovskite solar cell

A technology for solar cells and hole transport layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high preparation temperature not suitable for flexible substrates, difficulty in achieving large-area deposition, continuous coating, etc., to achieve continuous NiO Hole transport layer, effect of lowering the preparation temperature

Inactive Publication Date: 2019-07-05
李小成
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the deficiencies of the prior art, the present invention provides a method for preparing a NiO hole transport layer of a perovskite solar cell, which solves the problem that the preparation temperature of the NiO hole transport layer of a perovskite solar cell is relatively high. The technical problem of being suitable for flexible substrates, and solving the technical problem that it is difficult to deposit large-area and continuous coatings by the spin-coating method of preparing NiO hole transport layers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of NiO hole transporting layer of perovskite solar cell
  • Preparation method of NiO hole transporting layer of perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The preparation method of above-mentioned NiO hole transport layer comprises the following steps:

[0031] S101. Take 60g of NiO with an average particle size≤100nm and 20g of NiO with an average particle size≤25um, set aside;

[0032] S102. Place the nano-NiO particles in step S101 in 50 mL of distilled water, and disperse them uniformly by ultrasonic;

[0033] S103. Place the micron NiO particles in step S101 in 10 mL of distilled water, and disperse them uniformly by ultrasonic;

[0034] S104. The nano-NiO dispersion in step S102 is added to a reactor equipped with a stirring device and a heating device. At a stirring rate of 180r / min, first slowly add 5g of sodium hexametaphosphate into the reactor, and after fully dissolving , then slowly add the NiO dispersion in step S103 into the reactor, stir at 180r / min for 2h, and then evaporate and remove the solvent at a temperature of 120°C and a stirring rate of 600r / min;

[0035] S105. Add 25mL of distilled water into ...

Embodiment 2

[0039] The preparation method of above-mentioned NiO hole transport layer comprises the following steps:

[0040] S201. Take 70g of NiO with an average particle size≤100nm and 10g of NiO with an average particle size≤25um, and set aside;

[0041] S202. Place the nano-NiO particles in step S201 in 50mL distilled water, and disperse them uniformly by ultrasonic;

[0042] S203. Place the micron NiO particles in step S201 in 10 mL of distilled water, and disperse them uniformly by ultrasonic;

[0043] S204. The nano-NiO dispersion in step S202 is added to a reactor equipped with a stirring device and a heating device. At a stirring rate of 200r / min, first slowly add 8g of sodium hexametaphosphate into the reactor, and after fully dissolving , then slowly add the NiO dispersion in step S203 into the reactor, stir at 200r / min for 2h, and then evaporate and remove the solvent at a temperature of 110°C and a stirring rate of 500r / min;

[0044] S205. Add 25mL of distilled water into ...

Embodiment 3

[0048] The preparation method of above-mentioned NiO hole transport layer comprises the following steps:

[0049] S301. Take 80g of NiO with an average particle size of ≤100nm and 5g of NiO with an average particle size of ≤25um for later use;

[0050] S302. Place the nano-NiO particles in step S301 in 50mL distilled water, and disperse them uniformly by ultrasonic;

[0051] S303. Place the micron NiO particles in step S301 in 10 mL of distilled water, and disperse them uniformly by ultrasonic;

[0052] S304. The nano-NiO dispersion in step S302 is added to a reactor equipped with a stirring device and a heating device. At a stirring rate of 300r / min, first slowly add 10g of sodium hexametaphosphate into the reactor, and after fully dissolving , then slowly add the NiO dispersion in step S303 into the reactor, stir at 300r / min for 2h, and then evaporate and remove the solvent at a temperature of 105°C and a stirring rate of 300r / min;

[0053] S305. Add 25mL of distilled wate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
alcoholysis degreeaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of perovskite solar cell preparation technologies and discloses a preparation method of an NiO hole transporting layer of a perovskite solar cell. According to the preparation method, nano-NiO and 5-20 parts of micron-NiO are taken, the nano-NiO and the micron-NiO are subject to uniform ultrasonic dispersion respectively, a nano-NiO dispersion liquid and an NiO dispersion liquid are jointly dispersed uniformly, a solvent is removed, uniformly dispersed NiO particles are sufficiently mixed with polyvinyl alcohol, NiO paint is prepared, a scrape-coating methodis adopted to spread the NiO paint on a perovskite light absorption layer of the perovskite solar cell, and the NiO hole transporting layer is prepared after a coating film is solidified. Through thepreparation method, the technical problem that an existing preparation method of the NiO hole transporting layer of the perovskite solar cell is not suitable for a flexible substrate due to high preparation temperature is solved, and the technical problem that it is difficult to realize deposition of a large-area continuous coating through a spin-coating method for preparing the NiO hole transporting layer is solved.

Description

technical field [0001] The invention relates to the technical field of perovskite solar cell preparation, in particular to a method for preparing a NiO hole transport layer of a perovskite solar cell. Background technique [0002] Such as figure 1 As shown, the structure is FTO / TiO 2 / CH 3 NH 3 PB 3 / Spiro-OMeTAD / Au perovskite solar cells are mainly composed of FTO electrode layer 1, TiO 2 Electron transport layer 2, CH 3 NH 3 PB 3 The perovskite absorption layer 3, the Spiro-OMeTAD hole transport layer 4 and the Au electrode layer 5 are composed of five parts. [0003] Such as figure 2 As shown, the structure is FTO / TiO 2 / CH 3 NH 3 PB 3 / Spiro-OMeTAD / Au perovskite solar cells work as follows: when CH 3 NH 3 PB 3 After the perovskite absorbing layer 3 absorbs sunlight and is excited, a pair of free electrons and holes is generated; the free electrons excited to the perovskite conduction band diffuse to CH 3 NH 3 PB 3 Perovskite absorber layer 3 / TiO 2 el...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46B82Y30/00
CPCB82Y30/00H10K71/00H10K2102/00Y02E10/549
Inventor 李小成
Owner 李小成
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com