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Positive QLED (Quantum dot Light-Emitting Diode) device and preparation method thereof

A device and ligand technology, which is applied in the field of positive QLED devices and its preparation, can solve the problems of destroying the quantum dot layer, affecting the film formation uniformity and interface performance of the quantum dot light-emitting layer, and achieving expanded selection range and multi-selectivity , the effect of expanding the range of choices

Inactive Publication Date: 2019-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a positive-type QLED device and its preparation method, aiming to solve the problem that the solvent of the electronic functional layer destroys the quantum dot layer in the preparation process of the existing positive-type QLED device, thereby affecting the formation of the quantum dot light-emitting layer. Issues with film uniformity and interfacial properties

Method used

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preparation example Construction

[0016] In the present invention, "strong polarity" and "weak polarity" are a relative description, which means that a certain displacement ligand is used as a reference, and another displacement ligand is compared with the result of its polarity, or a certain organic The solvent is used as a reference, and the polarity of another organic solvent is compared with it. The opposite polarity refers to the relative strength of polarity, not the difference between polarity and non-polarity in the strict sense. The embodiment of the present invention provides a method for preparing a positive QLED device, comprising the following steps:

[0017] S01. providing an anode and a replacement ligand solution;

[0018] S02. Depositing a quantum dot prefabricated film on the anode, the quantum dot prefabricated film is composed of quantum dots with initial ligands on the surface, and the quantum dot prefabricated film is carried out with the replacement ligand in the replacement ligand solu...

Embodiment approach

[0027] As an implementation, X 2 -COOH, -OH, -CN, -NHCO-CH 3 , -NH 2 , -SH, -CHO, the replacement ligands formed can be understood as strong polar ligands, including but not limited to mercaptoacetic acid, 3-mercaptopropionic acid, 3-mercaptobutyric acid, 6-mercaptohexanoic acid, mercapto Ethylamine, 3-mercaptopropylamine, 4-mercaptobenzoic acid, mercaptoglycerol, 1-trimethylamineethanethiol, mercaptoaniline, nitroaniline, sulfoaniline, aminobenzoic acid, 4-(diphenylphosphino ) at least one of benzoic acids.

[0028] As another embodiment, X 2 -CO-, -COOR, -NO 2 , -O-, -O-CH 3 、-CH 3 When, the replacement ligands constituted can be understood as weak polar replacement ligands, including but not limited to octylamine, propylamine, hexadecylamine, 4-mercaptoanisole, 1-hydroxy-3-methoxy-propane at least one of . Of course, the embodiments of the present invention can also adjust the polarity of the surface ligands by adjusting the carbon chain length of R. Specifically, t...

Embodiment 1

[0058] A method for preparing a positive-type structure quantum dot light-emitting diode, comprising the following steps:

[0059] Provide an anode; dissolve 3-mercaptopropionic acid in ethanol to prepare a displacement ligand solution;

[0060] Print the CdSe quantum dot prefabricated film on the anode, immerse the quantum dot prefabricated film in the ligand replacement solution, take it out after soaking for 10min, then transfer it to the vacuum chamber, adjust the vacuum degree to 10Pa and maintain it for 30min, remove Uncoordinated ligands and solvents in the quantum dot luminescent layer to prepare the CdSe quantum dot luminescent layer;

[0061] Print an electronic functional layer on the CdSe quantum dot light-emitting layer, and finally evaporate a cathode to obtain a positive structure quantum dot light-emitting diode.

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Abstract

The invention provides a preparation method of a positive QLED (Quantum dot Light-Emitting Diode) device, which comprises the steps of providing an anode and a displacement ligand solution; depositinga quantum dot prefabricated film on the anode, wherein the quantum dot prefabricated film is composed of quantum dots containing an initial ligand on the surface, in-situ ligand exchange is carried out on the quantum dot prefabricated film and the displacement ligand in the displacement ligand solution to displace the initial ligand with the displacement ligand so as to obtain a quantum dot light-emitting layer; preparing an electronic functional layer on the surface of the quantum dot light-emitting layer; and preparing a cathode on the electronic functional layer.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, and in particular relates to a positive QLED device and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new type of light-emitting device, which uses quantum dot materials (Quantum dots, QDs) as the light-emitting layer, and has incomparable advantages over other light-emitting materials, such as Controllable small size effect, ultra-high internal quantum efficiency, excellent color purity, etc., have great application prospects in the field of display technology in the future. [0003] In general, the surface of quantum dots will be connected to organic ligands by means of chelation or other means to connect inorganic ligands by forming chemical bonds. The surface ligands of quantum dots play a vital role in the synthesis of quantum dots. On the one hand, surface ligands can passivate the defects on the surface of quantum dots ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/26
Inventor 曹蔚然杨一行向超宇钱磊梁柱荣
Owner TCL CORPORATION
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