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Inversion qled device and preparation method thereof

A technology of devices and ligands, which is applied in the field of inverse QLED devices and its preparation, can solve the problems of destroying the quantum dot layer, affecting the film formation uniformity and interface performance of the quantum dot light-emitting layer, and achieving expanded selection range and multi-selectivity , improve the effect of selectivity

Active Publication Date: 2021-01-29
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide an inverse QLED device and its preparation method, aiming to solve the problem that the solvent of the hole functional layer destroys the quantum dot layer in the preparation process of the existing inverse QLED device, thereby affecting the quantum dot light-emitting layer. Problems with film formation uniformity and interfacial properties

Method used

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preparation example Construction

[0016] The embodiment of the present invention provides a method for preparing an inverted QLED device, comprising the following steps:

[0017] S01. providing a cathode and a replacement ligand solution;

[0018] S02. Depositing a quantum dot prefabricated film on the cathode, the quantum dot prefabricated film is composed of quantum dots with initial ligands on the surface, and the quantum dot prefabricated film is carried out with the replacement ligand in the replacement ligand solution In-situ ligand exchange, replacing the initial ligand with a replacement ligand to obtain a quantum dot light-emitting layer;

[0019] S03. Prepare a hole functional layer on the surface of the quantum dot luminescent layer;

[0020] S04. Prepare an anode on the hole functional layer.

[0021] The preparation method of the inverse QLED device provided by the embodiment of the present invention first deposits a quantum dot prefabricated film, and then uses in-situ ligand exchange to replac...

Embodiment approach

[0027] As an implementation, X 2 -COOH, -OH, -CN, -NHCO-CH 3 , -NH 2 , -SH, -CHO, the replacement ligands formed can be understood as strong polar ligands, including but not limited to mercaptoacetic acid, 3-mercaptopropionic acid, 3-mercaptobutyric acid, 6-mercaptohexanoic acid, mercaptoethyl Amine, 3-mercaptopropylamine, 4-mercaptobenzoic acid, mercaptoglycerol, 1-trimethylamineethanethiol, mercaptoaniline, nitroaniline, sulfoaniline, aminobenzoic acid, 4-(diphenylphosphino) at least one of benzoic acids.

[0028] As another embodiment, X 2 -CO-, -COOR, -NO 2 , -O-, -O-CH 3 、-CH 3 When, the replacement ligands constituted can be understood as weak polar replacement ligands, including but not limited to octylamine, propylamine, hexadecylamine, 4-mercaptoanisole, 1-hydroxy-3-methoxy-propane at least one of . Of course, the embodiments of the present invention can also adjust the polarity of the surface ligands by adjusting the carbon chain length of R. Specifically, th...

Embodiment 1

[0058] A method for preparing a quantum dot light-emitting diode with an inverted structure, comprising the following steps:

[0059] Provide a cathode; dissolve 3-mercaptopropionic acid in ethanol to prepare a displacement ligand solution;

[0060]Print the CdSe quantum dot prefabricated film on the cathode, immerse the quantum dot prefabricated film in the ligand replacement solution, take it out after soaking for 10min, then transfer it to the vacuum chamber, adjust the vacuum to be 10Pa and maintain it for 30min, remove Uncoordinated ligands and solvents in the quantum dot luminescent layer to prepare the CdSe quantum dot luminescent layer;

[0061] A hole functional layer is printed on the CdSe quantum dot light-emitting layer, and finally an anode is evaporated to obtain an inverse structure quantum dot light-emitting diode.

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Abstract

The invention provides a preparation method of an inverse OLED (Quantum dot Light-Emitting Diode) device, which comprises the steps of providing a cathode and a displacement ligand solution; depositing a quantum dot prefabricated film on the cathode, wherein the quantum dot prefabricated film is composed of quantum dots containing an initial ligand on the surface, in-situ ligand exchange is carried out on the quantum dot prefabricated film and the displacement ligand in the displacement ligand solution, and the initial ligand is displaced with the displacement ligand to obtain a quantum dot light emitting layer; preparing a hole functional layer on the surface of the quantum dot light emitting layer; and preparing an anode on the hole functional layer.

Description

technical field [0001] The invention belongs to the technical field of flat panel display, and in particular relates to an inverted QLED device and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new type of light-emitting device, which uses quantum dots (Quantum dots, QDs) as the light-emitting layer, and has incomparable advantages over other light-emitting materials, such as Controllable small size effect, ultra-high internal quantum efficiency, excellent color purity, etc., have great application prospects in the field of display technology in the future. [0003] In general, the surface of quantum dots will be connected to organic ligands by means of chelation or other means to connect inorganic ligands by forming chemical bonds. The surface ligands of quantum dots play a vital role in the synthesis of quantum dots. On the one hand, surface ligands can passivate the defects on the surface of quantum dots and impr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
Inventor 曹蔚然杨一行向超宇钱磊梁柱荣
Owner TCL CORPORATION
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