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Satellite-type vacuum film depositing system

A vacuum thin film and deposition system technology, applied in vacuum evaporation plating, ion implantation plating, coating, etc., can solve the problems of large floor area, complex structure, large load-bearing pressure of buildings, etc., to reduce the floor area, Optimize the floor area and reduce the effect of load-bearing pressure

Pending Publication Date: 2019-05-24
苏州华杨科学仪器有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the MBE equipment currently on the market has a relatively complex structure and a large area, which brings greater load-bearing pressure to the building.

Method used

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  • Satellite-type vacuum film depositing system
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  • Satellite-type vacuum film depositing system

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Embodiment Construction

[0029] Such as Figure 1~Figure 3 As shown, the present invention provides a satellite-type vacuum film deposition system, which is mainly composed of multiple operating chambers connected by pipelines. The operating chambers in the whole system are all made of 316 stainless steel. The operating chambers Including a transfer chamber 2, two co-evaporation deposition chambers, three magnetron sputtering chambers and a sample storage chamber 1, each of the operation chambers is equipped with a vacuum pump group for maintaining the vacuum degree of the cavity, and the vacuum pump The group consists of a backing pump and a molecular pump.

[0030] The transfer chamber 2 is located at the center of the entire system, and the other operating chambers are arranged equidistantly around the outer periphery of the transfer chamber 2, and the other operating chambers are respectively connected to the transfer chamber 2 with pipelines, And the gate valve is used for separation. A sample ...

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Abstract

The invention discloses a satellite-type vacuum film depositing system. The satellite-type vacuum film depositing system comprises of a plurality of operating cavities which are in tube connection, wherein each operating cavity includes a transferring chamber, two coevaporation depositing chambers, three magnetic control sputtering chambers and a sample storing chamber; each operating cavity is provided with a vacuum pump set used for maintaining the cavity vacuum degree, the transferring chambers are located on the central position of the whole system, the other operating cavities are arranged on the peripheries of the transferring chambers at equal intervals in a surrounding mode and are all in tube connection with the transferring chambers, and gate valves are used for separating; and asample conveying mechanism is arranged in the system, and machined samples are conveyed among the operating cavities under the action of the sample conveying mechanism. According to the satellite-type vacuum film depositing system, the technical effect on the different epitaxial films which are prepared on substrates in the system is realized, the experiment cost and time cost of sample transferring and preparing among the different devices are lowered, and the preparing efficiency is improved remarkably.

Description

technical field [0001] The invention relates to a sample support device, in particular to a sample support applicable to molecular beam epitaxy growth and in-situ characterization, and belongs to the field of vacuum scientific research equipment. Background technique [0002] Molecular beam epitaxy (MBE) technology was developed from the use of vacuum evaporation technology to prepare semiconductor thin film materials in the 1950s. This technology has opened up a series of brand-new superlattice devices and expanded the new field of semiconductor science. Important vacuum coating process. The main process of this technology is to place the semiconductor substrate on the sample stage of the ultra-high vacuum chamber, place the single crystal material to be grown in different jet furnaces of the vacuum chamber according to the elements, and heat them to the corresponding The molecular flow ejected by each element can grow an extremely thin single crystal and a superlattice st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/56C23C14/35C23C14/24
Inventor 张宏张冬志博
Owner 苏州华杨科学仪器有限公司
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