Display device

Abstract

Provided is a display device. The device includes a first substrate including an opposite first inner surface and first outer surface, an adjacent display region and pressure welding region and a plurality of thin film transistors, a second substrate which is disposed opposite to the display area and includes an opposite second inner surface and second outer surface and first color resistance andsecond color resistance, a display molecular layer disposed between the first substrate and the second substrate and an electrical shielding layer disposed on the first outer surface of the first substrate, the thin film transistors are disposed on the inner surface and correspond to the display area, the first color resistance and the second color resistance are respectively disposed on the second inner surface, the electrical shielding layer comprises a first shielding region and a second shielding region, the first shielding region is disposed at a position corresponding to the first colorresistance, and the second shielding region corresponds to the pressure welding region.

Description

technical field [0001] The invention relates to a display device, in particular to a display device with an electrostatic protection structure. Background technique [0002] With the development of display device technology, the definition of display devices is getting higher and higher, making the thin film transistor lattice metal lines of display devices thinner and denser, and the available area of ​​circuit design is getting smaller and smaller, so It is necessary to simplify some electrostatic protection (ESD) protection circuits, resulting in a decline in the antistatic ability of the thin film transistor lattice. When static electricity accumulates on the surface of the substrate, it is not easy to dissipate. When the static electricity is released, it is easy to cause static electricity to damage the circuit and cause damage. [0003] At present, due to the touch function requirements of iTP products, the high-impedance electrostatic film on the side of the color-r...

AI Technical Summary

Problems solved by technology

[0002] With the development of display device technology, the definition of display devices is getting higher and higher, making the thin film transistor lattice metal lines of display devices thinner and denser, and the available area of ​​circuit design is getting smaller and smaller, so It is necessary to simplify some electrostatic protection (ESD) protection circuits, resulting in a decrease in the antistatic ability of the thin film transistor lattice

When static electricity accumulates on the surface of the substrate, it is not easy to dissipate. When the static electricity is released, it is easy to cause static electricity to damage the circuit and cause damage.

[0003] At present, due to the touch function requirements of iTP products, the high-impedance electrostatic film on the side of the color-resistive layer has a strict resistance limit, which is required to be 5×10 8 ~9×10 9 Between ohms, a large resistance value is likely to cause static electricity accumulation

[0004] In addition, due to the decline of anti-static ability, many manual processing processes and lamination processes will also generate high static electricity during the post-plywood process, causing static electricity to damage the circuit

Images