Super junction power device of split gate structure

Abstract

Embodiments of the invention disclose a super junction power device of a split gate structure. The device comprises a source, a drain, a first gate, a second gate, a third gate, a body diode and a body contact diode, wherein the cathode of the body diode is connected to the drain, the anode of the body contact diode is connected to the anode of the body diode, the cathode of the body contact diodeis connected to the source, the first gate controls a first current channel between the source and the drain to be turned on or off through the gate voltage, the second gate and a third gate are connected to the source, the second gate controls a second current channel between the source and the drain to be turned on or off through the source voltage, the third gate is a shield gate, and the source voltage is used to increase the withstand voltage of the super junction power device of the split gate structure.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a super junction power device with a divided gate structure and fast reverse recovery function. Background technique [0002] The cross-sectional structure of a super-junction power device with split gate structure in the prior art is as follows: figure 1 As shown, the drain region 21 and the first n-type drift region 20a located on the drain region 21 are included, and the first n-type drift region 20a is provided with a plurality of doped impurities in the first n-type drift region 20a to form a charge balance. A p-type columnar epitaxial doped region 22 ( figure 1 The structure of two p-type columnar epitaxial doped regions 22 is only shown as an example). A second n-type drift region 20b is provided above the first n-type drift region 20a, and several trenches are opened in the second n-type drift region 20b, and the trench includes two parts, an upper t...

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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a super-junction power device with a split-gate structure with a fast reverse recovery function to solve the problem of minority carrier injection in the super-junction power device with a split-gate structure in the prior art. technical issue with longer reverse recovery times

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