Method for improving control precision of monocrystalline silicon resistivity

Abstract

The invention provides a method for improving the control precision of monocrystalline silicon resistivity. The method includes grading the resistivity of recycled materials; determining the fluctuation range of alloy sheet parameters; calculating the resistivity of residual materials; and configuring alloy to control the target resistivity accuracy. The method has the advantages of improving resistivity control precision, improving product quality, meeting customer requirements, improving client battery conversion efficiency, reducing resistivity defect rate and improving qualified output atthe same time.

Description

technical field [0001] The invention belongs to the technical field of monocrystalline silicon production, and in particular relates to a method for improving the control precision of monocrystalline silicon resistivity. Background technique [0002] With the rapid development of the photovoltaic industry, the parameters of monocrystalline silicon wafer cells are constantly improving, and the requirements for raw material parameters are also getting higher and higher. For monocrystalline silicon, resistivity is a very important parameter index. Too high or too low resistivity has a very obvious impact on the conversion efficiency of cells. Therefore, stable resistivity is more helpful to improve the conversion of cells. Efficiency. At present, the resistivity of the same position of the single crystal fluctuates greatly, and the product performance is unstable. There is no feasible means to improve the resistivity control accuracy. Contents of the invention [0003] In vi...

AI Technical Summary

Problems solved by technology

For monocrystalline silicon, resistivity is a very important parameter index. Too high or too low resistivity has a very obvious impact on the conversion efficiency of cells. Therefore, stable resistivity is more helpful to improve the conversion of cells. Efficiency, at present, the resistivity of the same position of the single crystal fluctuates greatly, the product performance is unstable, and there is no feasible means to improve the resistivity control accuracy