Temperature measurement method based on MOSFET device interface trap recombination effects

An interface trap, temperature measurement technology, which is applied in the directions of thermometers, thermometers, and heat measurement with directly sensitive electrical/magnetic components, which can solve the problems of small measurement range and so on.

Inactive Publication Date: 2019-04-30
XIAN UNIV OF POSTS & TELECOMM
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Problems solved by technology

[0003] In order to solve the technical problem in the prior art that the measurement range is small when using the relationship between the output voltage and temperature of the PN junction to measure the ambient temperature, this application provides a temperature measurement method based on the recombination effect of MOSFET device interface traps

Method used

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  • Temperature measurement method based on MOSFET device interface trap recombination effects
  • Temperature measurement method based on MOSFET device interface trap recombination effects
  • Temperature measurement method based on MOSFET device interface trap recombination effects

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Embodiment 1

[0032] This embodiment provides a temperature measurement method based on the MOSFET interface trap effect. This embodiment selects an n-type MOSFET as the experimental equipment. When scanning with the gate voltage Vg, I is obtained. r The change curve of I r The change curve of is trough-like, with a minimum value Irmin. The method will be described below in conjunction with the accompanying drawings.

[0033] Such as figure 1 , the method includes:

[0034] Step 101: measure the minimum recombination current Irmin produced at the drain when the MOSFET interface trap acts as a recombination center under the current environment;

[0035] Step 102: Find the corresponding temperature value in the current-temperature comparison table according to the measured minimum combined current Irmin, which is the temperature of the current environment.

[0036] Wherein, in step 102, the comparison table of current and temperature is obtained by the following method:

[0037] Step 201...

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Abstract

The invention relates to the technical field of semiconductor devices, in particular to a temperature measurement method based on MOSFET interface trap effects. The method comprises steps: the extremevalue of recombination current generated at a drain when the MOSFET interface trap serves as a recombination center in the current environment is measured; and according to the extreme value of the recombination current, a corresponding temperature value is searched in a current temperature contrast table and is the temperature in the current environment. According to the temperature measurementmethod based on MOSFET interface trap effects, when a PN junction is biased positively and the source of the MOSFET is suspended under effects of the drain voltage Vd, the gate voltage Vg then makes achannel under the gate enter a depletion state, an exp [Vd / Vt] exponential term is added to the recombination current Ir generated at the drain when the MOSFET interface trap serves as the recombination center, the Ir changes more obviously during a process of adopting the gate voltage Vg for scanning, the Ir is thus extremely sensitive to the change of the temperature, the change of the temperature can thus be detected more easily, and the detection range is large.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a temperature measurement method based on the recombination effect of MOSFET device interface traps. Background technique [0002] The role of temperature detection in production and scientific research activities is becoming more and more important, and it is very common to use semiconductor detectors to detect temperature. At present, semiconductor detectors mainly use the relationship between the output voltage and temperature of the diode PN junction to measure temperature, and the measurement range is mainly concentrated around room temperature, which is difficult to meet the needs of a wider range of temperature measurement. How to obtain a better measurement range and accuracy through new semiconductor technology principles has become a technical difficulty that needs to be solved urgently. Contents of the invention [0003] In order to solve the technical...

Claims

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Application Information

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IPC IPC(8): G01K7/01
CPCG01K7/01
Inventor 陈海峰
Owner XIAN UNIV OF POSTS & TELECOMM
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