InGaAs detector chip and preparation method thereof

Abstract

The invention discloses an InGaAs detector chip and a preparation method thereof. The InGaAs detector chip sequentially comprises a substrate, an N-type semiconductor layer, an absorption layer and aP-type semiconductor layer. The N-type semiconductor layer is an n+ doped InP layer, the P-type semiconductor layer is a p+ doped InP layer, the absorption layer comprises a p+ doped P-type InGaAs absorption layer and an n+ doped N-type InGaAs absorption layer, and the P-type InGaAs absorption layer is adjacent to the P-type semiconductor layer. The N-type InGaAs absorption layer is adjacent to the N-type semiconductor layer, the thickness of the P-type InGaAs absorption layer is smaller than that of the N-type InGaAs absorption layer, and the doping concentration of the P-type InGaAs absorption layer is greater than that of the N-type InGaAs absorption layer. By optimizing the thicknesses and doping of the absorption layers, the high-low doped two-layer InGaAs absorption layers is adopted, the junction capacitance of a PN junction can be increased, the anti-static capability of the detector chip is greatly improved, and the reliability of the chip is ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an InGaAs detector chip and a preparation method thereof. Background technique [0002] The traditional structure of InGaAs detector chip is InP / InGaAs / InP structure, which has good performance in the near-infrared band, which makes it widely used in civil, military and aerospace fields. [0003] However, in the fields of lasers, detectors and other chips, electrostatic breakdown often leads to the failure of the chip during use, resulting in a reduction in the life of the chip, affecting the normal use of customers, and the antistatic ability and reliability of the chip cannot be guaranteed. [0004] Therefore, in view of the above technical problems, it is necessary to provide an InGaAs detector chip and a preparation method thereof. Contents of the invention [0005] In view of this, the object of the present invention is to provide an InGaAs detector ch...

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Problems solved by technology

[0003] However, in the fields of lasers, detectors and other chips, electrostatic breakdown often leads to the failure of the chip during use, resulting in a reduction in the life of the chip, affecting the normal use of customers, and the antistatic ability and reliability of the chip cannot be guaranteed.

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