Positive temperature coefficient polycrystalline silicon resistor structure and manufacturing method thereof

Abstract

The invention provides a positive temperature coefficient polycrystalline silicon resistor structure and a manufacturing method thereof. The positive temperature coefficient polycrystalline silicon resistor structure comprises a middle region and end regions, the middle region comprises nonmetallic polycrystalline silicon regions and metallic polycrystalline silicon regions, which are distributedat intervals, wherein resistance values of the nonmetallic polycrystalline silicon regions change with a negative temperature coefficient, resistance values of the metallic polycrystalline silicon regions change with a positive temperature coefficient, and the positive changing amount of a total resistance value of the metallic polycrystalline silicon regions along with temperature is greater thanthe negative changing amount of a total resistance value of the nonmetallic polycrystalline silicon regions along with temperature. According to the manufacturing method, the ratios of the nonmetallic polycrystalline silicon regions and the metallic polycrystalline silicon regions are adjusted, and thus the positive changing amount of the total resistance value of the metallic polycrystalline silicon regions along with temperatures is greater than the negative changing amount of the total resistance value of the nonmetallic polycrystalline silicon regions along with temperatures. The positivetemperature coefficient polycrystalline silicon resistor structure can avoid limitation of the performance of devices in semiconductor processes, and high resistance values can be obtained under theconditions that process burden is not increased, device process stability is guaranteed and the area is not sacrificed.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a positive temperature coefficient polysilicon resistance structure and a manufacturing method thereof. Background technique [0002] Semiconductor resistance devices are one of the most widely used devices in semiconductor chip products, and the temperature characteristics of resistance are very important in product applications. Commonly used resistors are as follows. The resistance formed by using polysilicon material on the semiconductor substrate through the isolation of the oxide layer is called polysilicon (Poly) resistance. Please refer to Figure 10 , the relationship between the resistance of the diffusion region and the position of the polysilicon resistance is as follows. Taking the P-type silicon substrate as an example, it includes a P-type silicon substrate 301, an N-type diffused region resistor 302, an oxide layer 303, and a polysilicon resi...

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Problems solved by technology

In order to obtain a positive temperature coefficient resistance structure with a higher resistance value, it is generally obtained through the process of the above-mentioned diffusion region resistance or well region resistance. The disadvantage is that the accuracy or area is sacrificed. When the resistance accuracy requirements are very strict, the design is limited by the inability to obtain a polysilicon resistance structure with a positive temperature coefficient

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