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A multifunctional optoelectronic device

An optoelectronic device and multi-functional technology, applied in the electronic field, can solve the problems of increased application cost and low integration level, and achieve the effects of low working voltage, high response speed and high energy efficiency

Active Publication Date: 2020-06-23
SHENZHEN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the above-mentioned problems in the prior art, the present invention provides a multi-functional optoelectronic device to solve the problem that the existing optoelectronic device does not realize the integration of multiple functions into a single device structure, the degree of integration is low, and the application Cost and other issues

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Embodiment Construction

[0031] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments. Terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in the preferred embodiment are only for convenience of description, and are not used to limit the scope of the present invention. The scope of implementation and the change or adjustment of its relative relationship shall also be regarded as the scope of implementation of the present invention without substantive changes in technical content.

[0032] Such as figure 1 As shown, the multifunctional optoelectronic device includes ITO glass 1, hole transport layer 2, heterojunction 7, electron transport layer 5 and metal electrode 6, and the ITO glass 1 is the substrate of the entire optoelectronic device, and the ITO glass 1 A hole transport layer 2, a heterojunction 7, and an electron transport layer 5 are sequentially arranged on the top from bottom to top, or an electro...

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Abstract

A multifunctional optoelectronic device, including ITO glass, a hole transport layer, a heterojunction, an electron transport layer and a metal electrode. The ITO glass is the substrate of the entire optoelectronic device, and the ITO glass is sequentially provided with holes from bottom to top. Transport layer, heterojunction and electron transport layer, or the ITO glass is provided with electron transport layer, heterojunction and hole transport layer sequentially from bottom to top, and metal electrodes are plated on the uppermost electron transport layer or hole transport layer. On the surface of the hole transport layer, the heterojunction is composed of a perovskite layer and a quantum dot layer; the hole transport layer forms a P-type semiconductor, the heterojunction forms an intrinsic semiconductor, and the electron transport layer forms an N-type semiconductor, so that the entire The optoelectronic device has a PIN structure, and a built-in electric field is formed in the optoelectronic device from the electron transport layer to the hole transport layer. The multifunctional optoelectronic device of the invention can realize functions such as effective energy collection, energy injection and energy detection on a single device structure.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a multifunctional optoelectronic device for mutual conversion between light energy and electric energy. Background technique [0002] As the application fields of optoelectronic devices become wider and wider, the demand for light weight, integration and multi-functionalization of optoelectronic devices in this era is also increasing. For example, it is becoming more and more important to integrate multiple optoelectronic devices into one system more important. In the prior art, optoelectronic devices have not yet efficiently integrated the advantages of low energy consumption, low operating voltage, high response speed, high energy efficiency, high-quality continuous light, and energy collection, injection, and detection into a single device structure, and Electronic devices in the prior art not only have a large area, but also various functions need to be realized by diffe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/50
CPCH10K30/152H10K50/115Y02E10/549
Inventor 李贵君任鐾韬阮锦昌江乐周定坚徐浩
Owner SHENZHEN UNIV
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