Numerical control polishing method for sapphire wafer for LED based on high-ratio polishing solution

A sapphire wafer and polishing liquid technology, which is applied in the field of sapphire wafer polishing for LEDs, can solve the problems of high cost of single-chip polishing, difficulty in cleaning, and high degree of crystallization, so as to increase the number of polishing, reduce the cost of a single chip, and reduce crystallization degree of effect

Inactive Publication Date: 2019-04-16
YUNNAN CRYSTALAND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for polishing sapphire wafers for LEDs based on a high-proportion polishing liquid, which solves the problems that the current method for polishing sapphire wafers for LEDs makes the cost of single-chip polishing relatively high and the degree of crystallization is high, which makes it difficult to clean and clean.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Embodiment 1: a kind of LED sapphire wafer numerical control polishing method based on high proportioning polishing liquid comprises the following steps:

[0025] 1) Configure a high-proportion polishing fluid as a new material for polishing fluid;

[0026] 2) Grinding and polishing the surface of the sapphire wafer by circular polishing;

[0027] 3) Recycle the remaining polishing liquid produced by one cycle of grinding and polishing, and use it as old polishing liquid material;

[0028] 4) During the grinding and polishing process of the next cycle, add the old polishing liquid material according to the volatilization of the new polishing liquid material for rehydration; by increasing the polishing liquid ratio, the original 1:1 is sequentially increased to 1:1.2; 1:1.5; Multiple ratios such as 1:2, and finally evaluated the quality data after processing. While the quality is guaranteed, the ratio was increased as much as possible. The same bucket of stock solution,...

Embodiment 2

[0029] Embodiment 2: The high-proportion polishing solution includes polishing stock solution and water; the high-proportion polishing solution is obtained by uniformly mixing the polishing stock solution and water according to the volume ratio of 1:n; the value range of n is 1-3; Through different polishing solutions, the polishing cost of sapphire wafers is reduced by 1-2 / (1+n))%, n>1.

Embodiment 3

[0030] Embodiment 3: the particle size range of the polishing stock solution is 90nm-126nm; the particulate matter in the polishing stock solution is multi-angular structure; the average particle diameter of the commonly used polishing stock solution is 90nm; by improving the particle size in the polishing stock solution The material increases the particle size range of the polishing stock solution to 90m-126nm, which improves the grinding efficiency of polishing. The particle material in the polishing stock solution is changed from the original unilateral shape to a multi-angular shape, which improves the grinding efficiency of polishing.

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PUM

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Abstract

The invention discloses a numerical control polishing method for a sapphire wafer for an LED based on a high-ratio polishing solution. The method comprises the following steps that 1, the high-ratio polishing solution is prepared and serves as a polishing solution fresh material; 2, circular polishing is adopted for grinding and polishing the surface of the sapphire wafer; 3, the remaining polishing solution generated by one-time circular grinding and polishing is recovered and treated to serve as a polishing solution old material; and 4, in the circular grinding and polishing process of the next time, the polishing solution old material is added to supplement the solution according to the volatilization amount of the polishing solution fresh material. The high-ratio solution comprises polishing stock solution and water, the high-ratio polishing solution is obtained by uniformly mixing the polishing stock solution and the water according to the volume ratio of 1:n, and the value rangeof n is 1-3. According to the technical scheme, the method solves the problems that a present method for polishing the sapphire wafer for the LED is high in single-wafer polishing cost, the crystallization degree is high, and cleaning and sweeping are not easy.

Description

technical field [0001] The invention relates to the technical field of polishing sapphire wafers for LEDs, in particular to a numerically controlled polishing method for sapphire wafers for LEDs based on a high-proportion polishing liquid. Background technique [0002] Sapphire α-Al2O3 single crystal has excellent optical, mechanical, thermal, dielectric, corrosion resistance and other properties. With the continuous increase of market competition, how to produce products with more suitable performance and price can seize the market opportunity. Therefore, while ensuring the quality, the cost advantage is particularly important. In order to control the processing cost, it is necessary to continuously optimize and improve the raw materials and auxiliary materials. For polishing, the cost of polishing liquid is the highest item. How to reduce the use of polishing liquid Cost has become a difficult problem that must be overcome; [0003] At present, the polishing liquid used f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B1/00
CPCB24B1/00
Inventor 吴康邓源黄微
Owner YUNNAN CRYSTALAND
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