Butt coupling detector and method for manufacturing butt coupling detector

A docking coupling and detector technology, which is applied in semiconductor devices, final product manufacturing, radiation control devices, etc., can solve the problem of small saturation current of docking coupling detectors, achieve reduced RC time constant, uniform optical signal, and reduced area Effect

Pending Publication Date: 2019-04-05
NAT CENT FOR ADVANCED PACKAGING
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  • Abstract
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  • Claims
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Problems solved by technology

[0003] In view of this, the embodiment of the present invention provides a butt-coupled detector and a method for fabricating a butt-coupled detector to solve the problem of too small saturation current of a butt-coupled detector in the prior art

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  • Butt coupling detector and method for manufacturing butt coupling detector
  • Butt coupling detector and method for manufacturing butt coupling detector
  • Butt coupling detector and method for manufacturing butt coupling detector

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Embodiment Construction

[0022] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0023] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the p...

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Abstract

The invention discloses a butt coupling detector and a method for manufacturing the butt coupling detector. The butt coupling detector comprises: a substrate, and a passive waveguide region, a butt coupling region and an absorption region, which are sequentially arranged on the substrate one the same layer along the propagation direction of the incident light, wherein the butt coupling region is embedded in the absorption region and coupled with the same, and the cross-sectional area of the butt coupling region along the propagation direction of the incident light is gradually reduced. By implementing the butt coupling detector provided by the invention, the light is evenly coupled into the absorption region through the butt coupling region by changing the pattern distribution of light atthe butt interface between the passive waveguide region and the absorption region in the prior art by the butt coupling region, thereby solving the problem of premature saturation of the butt couplingdetector. The method can significantly improve the saturated output power of the butt coupling detector while maintaining the high coupling efficiency and high bandwidth of the butt coupling detector.

Description

technical field [0001] The invention relates to the field of optoelectronic integration technology, in particular to a butt-coupling detector and a method for making the butt-coupling detector. Background technique [0002] In silicon optoelectronic systems with integrated waveguides, the detection of light is the primary task. In recent years, various technologies have been developed around detectors, such as bonding III-V detectors to Si substrates. However, as Si-based epitaxial Ge technology becomes more and more mature, the technology of Si-based Ge detectors shows a strong advantage in the field of near-infrared detection because it is compatible with CMOS technology, and has been widely studied. For Ge detectors, there are two main ways for light to couple from SOI waveguides to Ge detectors: evanescent coupling and butt coupling. The evanescent coupling detector is characterized by relatively uniform light absorption, but the coupling efficiency is low, and a longe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L27/144H01L31/08
CPCH01L27/144H01L31/08H01L31/1876Y02P70/50
Inventor 孙思维
Owner NAT CENT FOR ADVANCED PACKAGING
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