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Novel silicon carbide junction barrier Schottky diode and fabrication method thereof

A technology of junction barrier Schottky and manufacturing method, which is applied in the field of semiconductor power devices, can solve the problems of low avalanche tolerance of junction barrier diodes, and achieve the effect of improving avalanche tolerance

Active Publication Date: 2019-04-02
HUNAN SANAN SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This results in a lower avalanche withstand of the junction barrier diode

Method used

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  • Novel silicon carbide junction barrier Schottky diode and fabrication method thereof
  • Novel silicon carbide junction barrier Schottky diode and fabrication method thereof
  • Novel silicon carbide junction barrier Schottky diode and fabrication method thereof

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Embodiment 1

[0038] refer to figure 1 , this embodiment provides a novel silicon carbide junction barrier Schottky diode, comprising a first conductivity type silicon carbide substrate 10 stacked, a first conductivity type silicon carbide epitaxial layer 11; the first conductivity type silicon carbide epitaxial layer The upper surface of the layer 11 is sequentially provided with an active region 31, a guard ring 32 and a second conductivity type terminal field limiting ring 13 from the center to the outside; the active region 31 includes a plurality of second conductivity type junction barriers arranged at intervals District 12;

[0039] Along the direction from the guard ring 32 to the center of the active region 31 , the distance between adjacent junction barrier regions 12 of the second conductivity type gradually increases, and the width of the junction barrier regions 12 of the second conductivity type gradually decreases.

[0040] Specifically, the guard ring 32 is divided into a s...

Embodiment 2

[0045] refer to image 3The difference between this embodiment and Embodiment 1 is that: the junction barrier region 12 of the second conductivity type is ring-shaped, along the direction from the periphery of the guard ring 32 to the center of the active region 31, adjacent to the junction of the second conductivity type The distance between the barrier regions 12 increases gradually, and the width of the junction barrier regions 12 of the second conductivity type gradually decreases.

Embodiment 3

[0047] refer to Figure 4 with 5 , the difference between this embodiment and embodiment 1 is: in this embodiment, each of the second conductivity type junction barrier 12 regions includes two sub-junction barrier regions; the width of the at least two sub-junction barrier regions is the same , the distance between them is also the same; and the distance is equal to the distance between the junction barrier region 12 of the second conductivity type where it is located and the last junction barrier region 12 of the second conductivity type. This forms the structure of group gradients.

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Abstract

The invention provides a novel silicon carbide junction barrier Schottky diode. The novel silicon carbide junction barrier Schottky diode comprises a first conductive type of silicon carbide substrateand a first conductive type of silicon carbide epitaxial layer which are arranged in a lamination way, wherein an active region, a protection ring and a second conductive type of terminal field limitation ring are sequentially arranged on an upper surface of the first conductive type of silicon carbide epitaxial layer from center to outside, the active region comprises a plurality of second conductive types of junction barrier regions which are arranged at intervals, the distance between adjacent second conductive types of junction barrier regions is gradually increased along a direction fromthe protection ring to the center of the active region, and the widths of the second conductive types of junction barrier regions are gradually reduced. The invention also provides a fabrication method of the silicon carbide junction barrier Schottky diode.

Description

technical field [0001] The present invention relates to semiconductor power devices, and more particularly to silicon carbide diodes. technical background [0002] Chinese patent 200710153275.9, titled "SiC Schottky barrier semiconductor device", describes the junction barrier d1 / d2≥1 of the second conductivity type; in this patent, the depth of the entire guard ring < the depth of the junction barrier in the active region ; Chinese patent: CN201710027731, titled "Silicon carbide Schottky diode structure and preparation method for improving surge capability", describes that the width of the junction barrier region in the active region is divided into two types, wide and narrow, and the spacing is evenly distributed. [0003] In the above patent description, the junction depths of the active P region and the guard ring P region are consistent. This results in lower avalanche withstand of the junction barrier diode. Contents of the invention [0004] The main technical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/16H01L29/06H01L21/329
CPCH01L29/0623H01L29/1608H01L29/66143H01L29/872
Inventor 陶永洪高秀秀蔡文必
Owner HUNAN SANAN SEMICON CO LTD
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