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Low-frequency noise suppression device and method for tunnel magnetoresistive effect sensor

A tunnel magnetoresistance and low-frequency noise technology, applied in the field of low-frequency noise suppression devices, can solve the problems of output noise affecting resolution, affecting sensor detection performance, limiting static or low-frequency magnetic field detection capabilities, etc., to improve signal-to-noise ratio and simple method , the effect of stable performance

Active Publication Date: 2019-04-02
SUZHOU UNIV
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Problems solved by technology

[0003] Although the sensitivity of the TMR sensor to detect magnetic fields is high, its output noise seriously affects the resolution, especially the 1 / f noise at low frequency
Since the size of the 1 / f noise is opposite to the working frequency of the sensor, the 1 / f noise is very high when the frequency is low. The detection accuracy at high frequency is two orders of magnitude worse, which severely limits its ability to detect static or low-frequency magnetic fields, and the 1 / f noise depends on the internal magnetic structure and will change with the bias voltage, so it cannot pass through the sensor The offset modulation is eliminated, therefore, the noise in the low frequency band seriously affects the detection performance of the sensor

Method used

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  • Low-frequency noise suppression device and method for tunnel magnetoresistive effect sensor
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  • Low-frequency noise suppression device and method for tunnel magnetoresistive effect sensor

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Embodiment Construction

[0039] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.

[0040] In order to improve the resolution of the tunnel magneto-resistance effect sensor in the low frequency band, the static magnetic field (or low-frequency magnetic field) to be measured is modulated into a high-frequency magnetic field in the present invention, so that the magnetic signal to be measured induced by the tunnel magneto-resistance effect sensor is from a higher The low-frequency noise is modulated to the high-frequency band of the thermal noise level, thereby eliminating the influence of the low-frequency 1 / f noise.

[0041] refer to Figure 1-Figure 4 As shown, the invention discloses a low-frequency noise suppression device and method for a magnetic aggregation...

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Abstract

The invention discloses a low-frequency noise suppression device and method for a tunnel magnetoresistive effect sensor. The device comprises a sensitive structure, wherein the sensitive structure comprises a micro coil, the tunnel magnetoresistive effect sensor and a soft magnetic conductor which are sequentially disposed on a same horizontal line; the axial direction of the micro coil is perpendicular to the horizontal line; the micro coil and the tunnel magnetoresistive effect sensor are spaced by a preset distance, and the sensitive direction of the tunnel magnetoresistive effect sensor isperpendicular to the axial direction of the micro coil; an oscillating circuit, which is connected to the micro coil to drive the micro coil to generate a periodic alternating magnetic field; and a low-noise circuit, wherein the low-noise circuit is connected with the tunnel magnetoresistive effect sensor and is used for processing an output signal of the tunnel magnetoresistive effect sensor. According to the low-frequency noise suppression device for the tunnel magnetoresistive effect sensor provided by the invention, low-frequency noises can be suppressed, the signal-to-noise ratio and thedetection sensitivity are improved, the performance is stable, and the cost is low.

Description

technical field [0001] The invention relates to the technical field of tunnel magnetoresistance effect sensors, in particular to a low-frequency noise suppression device and method for tunnel magnetoresistance effect sensors. Background technique [0002] The tunnel magnetoresistance effect sensor is a sensor that converts the sensed magnetic field intensity change into an electrical signal change. As a measuring device, the tunnel magnetoresistance effect sensor has many advantages such as high magnetic field sensitivity, low power consumption, good temperature stability, and small size. Advantages, used in modern industry and electronic products for weak magnetic field detection and measurement of physical parameters such as current, position, and direction. [0003] Although the sensitivity of the tunnel magnetoresistance effect sensor to detect the magnetic field is high, its output noise seriously affects the resolution, especially the 1 / f noise at low frequency. Since...

Claims

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Application Information

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IPC IPC(8): G01D18/00
CPCG01D18/00
Inventor 石明慧姚莹飞徐大诚高路
Owner SUZHOU UNIV
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