Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

In-site quick-drying crystallization preparation method of liquid film cold-based creepage-suppression thermal-adhesive coating film of suede uniform perovskite film

A technology of perovskite and perovskite precursors, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve problems such as reducing production efficiency, increasing processes and time, reducing photoelectric conversion efficiency, etc. The effect of wasting time, improving production speed and reducing production cost

Active Publication Date: 2019-03-29
XI AN JIAOTONG UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with silicon cells with pyramid textured light-trapping structures, the photoelectric conversion efficiency of silicon solar cells after polishing decreases to about 50% of the original value
Therefore, there are following deficiencies in this technical solution: first, the photoelectric conversion efficiency of silicon solar cells is greatly reduced by polishing and smoothing the silicon pyramid textured surface; Production cost, increased process and time, reduced production efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A method for preparing a uniform perovskite film on a suede surface, comprising:

[0026] (1) Preparation of perovskite precursor sol: using DMF as solvent, PbI 2 and CH 3 NH 3 I is the solute, and the perovskite sol is prepared, and the CH in the perovskite sol 3 NH 3 PB 3 The mass percentage concentration is 35%.

[0027] (2) Pre-cooling of the substrate and pre-heating of the sol or solution: use low-temperature refrigeration to keep the temperature of the silicon solar cell with pyramid texture at 0°C, and use heating to keep the temperature of the perovskite precursor sol Keep at 70°C;

[0028] (3) Uniform coating and in-situ crystallization of perovskite liquid film: Coating the hot sol or solution of perovskite precursor on the cold substrate with pyramid texture to form a profiling perovskite liquid film; The thickness of the profiled perovskite liquid film is less than 60% of the average characteristic height of the pyramid; the significant cooling of th...

Embodiment 2

[0031] A method for preparing a uniform perovskite film on a suede surface, comprising:

[0032] (1) Preparation of perovskite precursor sol: using DMSO as solvent, PbI 2 and CH 3 NH 3 I is the solute, and the perovskite sol is prepared, and the CH in the perovskite sol 3 NH 3 PB 3 The mass percentage concentration is 30%.

[0033] (2) Pre-cooling of the substrate and pre-heating of the sol or solution: the temperature of the silicon solar cell with pyramidal texture is kept at -20°C by cryogenic refrigeration, and the temperature of the perovskite precursor sol is kept by heating. The temperature is kept at 100°C;

[0034] (3) Uniform coating and in-situ crystallization of perovskite liquid film: Coating the hot sol or solution of perovskite precursor on the cold substrate with pyramid texture to form a profiling perovskite liquid film ; The thickness of the profiled perovskite liquid film is less than 60% of the average characteristic height of the pyramid; the signif...

Embodiment 3

[0037] A method for preparing a uniform perovskite film on a suede surface, comprising:

[0038] (1) Preparation of perovskite precursor sol: using DMF as solvent, PbI 2 and CH 3 NH 3I is the solute, and the perovskite sol is prepared, and the CH in the perovskite sol 3 NH 3 PB 3 The mass percentage concentration is 35%.

[0039] (2) Pre-cooling of the substrate and pre-heating of the sol or solution: use low-temperature refrigeration to keep the temperature of the silicon solar cell with pyramid texture at 0°C, and use heating to keep the temperature of the perovskite precursor sol Keep at 50°C;

[0040] (3) Uniform coating and in-situ crystallization of perovskite liquid film: Coating the hot sol or solution of perovskite precursor on the cold substrate with pyramid texture to form a profiling perovskite liquid film; The thickness of the profiled perovskite liquid film is less than 60% of the average characteristic height of the pyramid; the significant cooling of the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an in-site quick-drying crystallization preparation method of a liquid film cold-based creepage-suppression thermal-adhesive coating film of a suede uniform perovskite film. Themethod comprises the following steps: step one, carrying out pre-cooling treatment of a substrate and pre-heat treatment of a sol; step two, carrying out uniform coating of a perovskite liquid film and in-site crystallization; to be specific, coating a cold substrate having the pyramidal suede morphology with a perovskite precursor hot sol to form a profile perovskite liquid film, cooling the profile perovskite liquid film substantially to realize rapid over saturation of the solute in the liquid film and thus carrying out in-site crystallization of the perovskite to obtain a perovskite film;and step three, carrying out heat trematn of the perovskite film, removing a residual solvent and growing crystalline grains to obtain a full-coverage pyramid-shape-like suede uniform perovskite film. According to the invention, under the circumstance that the silicon pyramid suede part is not polished and ground, preparation of a full-coverage uniform profile perovskite film on the micrometer-scale waved pyramid suede substrate is realized by a solution deposition method; and the high-efficiency advantage of the silicon solar cell can be kept.

Description

technical field [0001] The invention belongs to the technical field of silicon-perovskite laminated solar cell preparation, and in particular relates to a method for preparing a perovskite film. Background technique [0002] Solar energy is a green, safe, inexhaustible and inexhaustible energy source. Solar cell technology is an effective way of utilizing solar energy. It is an important measure to solve energy problems and environmental pollution and realize green and sustainable development. It is of great significance to solve energy and environmental problems in the process of human development. Organic-inorganic hybrid perovskite solar cells have attracted extensive attention from academia and industry around the world in recent years because of their advantages such as ultra-high photoelectric conversion efficiency, simple and inexpensive preparation process and equipment, and low-temperature preparation by solution method. As of November 2018, the highest efficiency ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/12H10K71/40H10K30/10Y02E10/549
Inventor 杨冠军李小磊刘梅军刘研丁斌李长久李成新
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com