Preparation method of in-situ quick-drying crystallization of liquid-film cold-based anti-climbing heat-resistant adhesive coating film of suede uniform perovskite film
A technology of perovskite and perovskite precursors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problem of reducing the photoelectric conversion efficiency of silicon solar cells, increasing the production cost of stacked solar cells, and photoelectric conversion Efficiency reduction and other issues
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Embodiment 1
[0025] A method for preparing a uniform perovskite film on a suede surface, comprising:
[0026] (1) Preparation of perovskite precursor sol: using DMF as solvent, PbI 2 and CH 3 NH 3 I is the solute, and the perovskite sol is prepared, and the CH in the perovskite sol 3 NH 3 PB 3 The mass percentage concentration is 35%.
[0027] (2) Pre-cooling of the substrate and pre-heating of the sol or solution: use low-temperature refrigeration to keep the temperature of the silicon solar cell with pyramid texture at 0°C, and use heating to keep the temperature of the perovskite precursor sol Keep at 70°C;
[0028] (3) Uniform coating and in-situ crystallization of perovskite liquid film: Coating the hot sol or solution of perovskite precursor on the cold substrate with pyramid texture to form a profiling perovskite liquid film; The thickness of the profiled perovskite liquid film is less than 60% of the average characteristic height of the pyramid; the significant cooling of th...
Embodiment 2
[0031] A method for preparing a uniform perovskite film on a suede surface, comprising:
[0032] (1) Preparation of perovskite precursor sol: using DMSO as solvent, PbI 2 and CH 3 NH 3 I is the solute, and the perovskite sol is prepared, and the CH in the perovskite sol 3 NH 3 PB 3 The mass percentage concentration is 30%.
[0033] (2) Pre-cooling of the substrate and pre-heating of the sol or solution: the temperature of the silicon solar cell with pyramidal texture is kept at -20°C by cryogenic refrigeration, and the temperature of the perovskite precursor sol is kept by heating. The temperature is kept at 100°C;
[0034] (3) Uniform coating and in-situ crystallization of perovskite liquid film: Coating the hot sol or solution of perovskite precursor on the cold substrate with pyramid texture to form a profiling perovskite liquid film ; The thickness of the profiled perovskite liquid film is less than 60% of the average characteristic height of the pyramid; the signif...
Embodiment 3
[0037] A method for preparing a uniform perovskite film on a suede surface, comprising:
[0038] (1) Preparation of perovskite precursor sol: using DMF as solvent, PbI 2 and CH 3 NH 3I is the solute, and the perovskite sol is prepared, and the CH in the perovskite sol 3 NH 3 PB 3 The mass percentage concentration is 35%.
[0039] (2) Pre-cooling of the substrate and pre-heating of the sol or solution: use low-temperature refrigeration to keep the temperature of the silicon solar cell with pyramid texture at 0°C, and use heating to keep the temperature of the perovskite precursor sol Keep at 50°C;
[0040] (3) Uniform coating and in-situ crystallization of perovskite liquid film: Coating the hot sol or solution of perovskite precursor on the cold substrate with pyramid texture to form a profiling perovskite liquid film; The thickness of the profiled perovskite liquid film is less than 60% of the average characteristic height of the pyramid; the significant cooling of the...
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