Gate driving circuit with protection function for enhanced GaN power device

Abstract

The invention discloses a gate driving circuit with a protection function for an enhanced GaN power device. The circuit comprises an interface circuit H, an interface circuit L, a dead zone generatingcircuit, a level shifting circuit, a low-end delay matching circuit, a driving circuit H, a driving circuit L, an undervoltage lockout circuit H, an undervoltage lockout circuit L, an overcurrent protection circuit, and an overheat protection circuit. The driving circuit can automatically detect the chip overheating, undervoltage or overcurrent of voltage and power supply, and turns off the GaN power device for protection to ensure that its operating characteristics are in a safe zone.

Description

technical field [0001] The invention belongs to the field of integrated circuit design, and more specifically relates to a gate drive circuit with protection function applied to GaN power devices. technical background [0002] Traditional power electronic power devices based on silicon materials have gradually approached their theoretical limits, and it is difficult to meet the development needs of high frequency and high power density of power electronic technology. Compared with traditional Si devices, GaN devices show their advantages in on-resistance and gate charge, which can enable power converters to achieve smaller volume, higher frequency and higher efficiency, so that they can be used in automotive, communication, industrial It has broad application prospects in other fields. The increase of switching frequency can not only effectively reduce the size of capacitors, inductors and transformers in the system circuit, but also suppress interference, reduce ripple, im...

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Problems solved by technology

But there are also some factors that need special attention: low threshold voltage; low gate-source voltage upper limit VGS(MAX); reverse conduction

The above-mentioned factors that need special consideration will cause some problems when driving GaN devices, so that the current traditional driving circuits for MOS power devices are not suitable for GaN power devices

GaN power devices are usually used at high-frequency switching frequencies (above MHz), especially after the switching frequency reaches 10MHz, the large delay of traditional gate drive (tens of nanoseconds) will account for an excessively large proportion of the switching cycle, and even cause Logic error, which in turn limits the switching frequency from increasing

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