Target material assembly and manufacturing method thereof

Abstract

The invention provides a target material assembly and a manufacturing method thereof. The manufacturing method comprises the following step: providing a target material and a back plate capable of bonding with the target material in a welded manner so as to form the target material assembly, wherein the thickness of the target material accounts for at least 60% of the thickness of the target material assembly. According to the invention, the thickness of the target material accounts for at least 60% of the thickness of the target material assembly; thus, compared with a scheme that the thickness of the target material accounts for a smaller proportion of the thickness of the target material assembly, the target material assembly provided by the invention has the following advantages: the thickness of the target material can be increased under the condition that the thickness of the target material assembly is unchanged, and the part of the target material for sputtering is correspondingly increased, so the service life of the target material assembly is effectively prolonged; the replacement frequency of the target material assembly is effectively reduced; improvement of process efficiency and reduction of process cost can be easily realized; meanwhile, the thickness of the target material assembly can remain unchanged, so a sputtering machine bench does not need to adjust thespacing between the target material and a product about to undergo film formation (such as a wafer), and adverse effects on the initial sputtering rate and film-forming uniformity of the target material assembly are avoided.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a target component and a manufacturing method thereof. Background technique [0002] In the semiconductor manufacturing process, it is often necessary to form various film layers. The magnetron sputtering process has become the most excellent substrate coating process due to its advantages of high sputtering rate, low substrate temperature rise, good film-substrate bonding force, excellent coating uniformity and strong controllability, and has become a semiconductor A widely used film-forming process in manufacturing. [0003] The magnetron sputtering process is one of the physical vapor deposition processes. Specifically, a closed magnetic field parallel to the target surface is added in dipole sputtering, and the secondary electrons are confined to a specific area of ​​the target surface by means of the orthogonal electromagnetic field formed on the target surface t...

AI Technical Summary

Problems solved by technology

The length of target service life will affect the frequency of target replacement, thus affecting the efficiency of the sputtering process

[0005] However, the service life of target components in the prior art is relatively short, resulting in high frequency of replacement of target components, which affects the efficiency of the sputtering process and increases the cost of the process

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