Geomagnetic sensing device and manufacturing method thereof

Abstract

The invention discloses a geomagnetic sensing device and a manufacturing method thereof. The geomagnetic sensing device comprises a CMOS circuit and a sensor located on the CMOS circuit; the CMOS circuit is connected with the sensor and used for driving the sensor and processing a detection signal generated by the sensor; and the sensor comprises a structure layer, magnetic resistance strips, short circuit electrodes, metal wires, a first conducting layer and a second conducting layer, wherein the magnetic resistance strips, the short circuit electrodes and the metal wires are sequentially formed on the structure layer, the first conducting layer and the second conducting layer are located over the structure layer, the first conducting layer is connected with the CMOS circuit and the metalwires, and the second conducting layer is connected with the CMOS circuit and an external circuit. By forming the sensor on the CMOS circuit and achieving electrical connection of the CMOS circuit and the sensor through the first conducting layer and the second conducting layer, the functions that the CMOS circuit drives the sensor and processes the detection signal generated by the sensor are achieved, and the purpose of integrating the CMOS circuit with the sensor is achieved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and more particularly, to a geomagnetic sensor device and a manufacturing method thereof. Background technique [0002] Micro-Electro-Mechanical System (MEMS) and integrated circuit (integrated circuit, IC) are currently the two most important development areas of the semiconductor industry. Driven by the rapid development of global science and technology, the integration of MEMS and IC has become an inevitable trend. There are three integration methods: monolithic integration, semi-hybrid (bonding) integration and hybrid integration. Monolithic integration means that the MEMS structure and CMOS are fabricated on one chip. Hybrid integration is to manufacture MEMS and IC on different dies, and then package them in a package, and connect the bare MEMS chip with bumps to the IC chip in the form of flip-chip welding or wire bonding to form a SIP. . Semi-hybrid is the use of three...

AI Technical Summary

Problems solved by technology

The inter-module interconnection of SIP is very long and the integration density is low, which is not conducive to signal transmission, and the manufacturing process is cumbersome and not conducive to integration.

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