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A SiC MOSFET device incorporating a Schottky diode

A Schottky diode and Schottky contact technology, applied in diodes, semiconductor devices, electrical components, etc., can solve problems such as large leakage current in blocking state, suppress excessive electric field, avoid bipolar degradation, and improve overall Effects of Electrical Characteristics and Reliability

Inactive Publication Date: 2019-01-22
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to optimize the performance of the third quadrant of SiC MOSFET devices and avoid bipolar degradation, and at the same time avoid the problem of excessive leakage current in the blocking state caused by the integration of the integrated Schottky interface electric field, the present invention proposes a groove bottom integrated Schottky SiC MOSFET devices for diodes

Method used

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  • A SiC MOSFET device incorporating a Schottky diode
  • A SiC MOSFET device incorporating a Schottky diode
  • A SiC MOSFET device incorporating a Schottky diode

Examples

Experimental program
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Effect test

Embodiment 1

[0028] Such as figure 2 As shown, the SiC MOSFET device integrated Schottky diode in this embodiment includes: an N-type substrate 12, an N-type epitaxial layer 10 located above the N-type substrate 12, and a P-body located above the N-type epitaxial layer 10 Region 20, P+ contact region 21 and N+ contact region 11 located above P-body region 20, oxide layer 4 and side gate 3 located between P-body region 20, P-shield region 22 located below side gate 3, The metal electrode 51 located above the device, the drain 52 located below the device and forming ohmic contact with the N-type substrate 12; the metal electrode 51 is in ohmic contact with the P+ contact region 21 and the N+ contact region 11 to form the device source, and at the same time The groove bottom forms a Schottky contact with the N-type epitaxial layer 10, and the P-shield region 22 at the groove bottom is a continuous area.

[0029] This example works as follows:

[0030] When the device is in normal use, the ...

Embodiment 2

[0034] Such as image 3 As shown, the difference between the device structure of this embodiment and Embodiment 1 is that a P-type contact region 23 at the bottom of the groove is provided between the P-shield regions 22 at the bottom of the groove, and the P-type contact region 23 at the bottom of the groove is in phase with the P-shield region 22. The metal electrode 51 forms a Schottky contact at the gap between the P-type contact region 23 and the P-shield region 22 at the bottom of the trench.

Embodiment 3

[0036] Such as Figure 4 As shown, the main difference between this embodiment and Embodiment 1 is that the P-shield region 22 at the bottom of the trench is a plurality of separate sub-regions.

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Abstract

The invention provides a SiC MOSFET device integrated with a Schottky diode, comprising an N-type substrate, an N-type epitaxial layer, a P-type epitaxial layer and a Schottky diode, wherein the SiC MOSFET device comprises an N-type substrate, an N-type epitaxial layer and a P-type epitaxial layer. Body Region, P + Contact Region, N + Contact Region, Oxide Layer, Side Gate, a P-Shield region, metaal electrode, a drain electrode; The SiC MOSFET device provided by the invention can improve the performance of the third quadrant of the SiC MOSFET, realize low reverse turn-on voltage and conduction loss, and avoid the problem of bipolar degradation. When the device is turned off, the groove bottom P. The shield region can not only shield the electric field at the chamfer of the groove gate, but also protect the Schottky interface at the bottom of the groove, which can effectively restrain the phenomenon of excessive electric field at these two places, and improve the overall electrical characteristics and reliability of the device.

Description

technical field [0001] The invention belongs to the field of electronic science and technology, and mainly relates to power semiconductor device technology, in particular to a SiC MOSFET device integrating Schottky diodes. Background technique [0002] The wide bandgap semiconductor material SiC is an ideal material for preparing high-voltage power electronic devices. Compared with Si materials, SiC materials have a high breakdown electric field strength (4×10 6 V / cm), high carrier saturation drift velocity (2×10 7 cm / s), high thermal conductivity (490W / Mk), good thermal stability, etc., so it is especially suitable for high-power, high-voltage, high-temperature and radiation-resistant electronic devices. [0003] MOSFET is the most widely used device structure in SiC power devices. Compared with bipolar devices, SiC MOSFET has lower switching loss and higher frequency characteristics because it has no charge storage effect. [0004] Due to the poor interface state of the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06
CPCH01L29/0623H01L29/7806
Inventor 李轩肖家木邓小川张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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