A Millimeter Wave Linearization Method Based on Schottky Diode

A Schottky diode, millimeter wave technology, applied in the field of radio frequency, can solve the problems of complex linearization technology structure, difficult to exert the best effect, low linearity compensation, etc., to improve integration and working speed, nonlinear distortion Improve and enhance the effect of linearity compensation

Active Publication Date: 2020-06-09
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this technology can only be effectively carried out in low-frequency and narrow-band signals at present, and it is difficult to exert the best effect in high-frequency and broadband environments.
[0007] Therefore, how to solve the problems of complex structure, large space area, low linearity compensation and poor adjustability of the existing linearization technology, and make it play the best effect in high frequency and broadband environment is particularly important.

Method used

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  • A Millimeter Wave Linearization Method Based on Schottky Diode
  • A Millimeter Wave Linearization Method Based on Schottky Diode
  • A Millimeter Wave Linearization Method Based on Schottky Diode

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Embodiment 1

[0052] See figure 1 , figure 1 It is a schematic flowchart of a Schottky diode-based millimeter wave linearization method provided by an embodiment of the present invention. The preparation method specifically comprises the following steps:

[0053] Step a, preparing a GaN-based microwave power device, and testing to obtain the input impedance of the GaN-based microwave power device;

[0054] Step b, preparing a Schottky diode, and testing to obtain the output impedance of the Schottky diode;

[0055] Step c, conjugate matching the output impedance of the Schottky diode with the input impedance of the GaN-based microwave power device;

[0056]Step d, interconnecting the GaN-based microwave power device and the Schottky diode through bonding.

[0057] Further, see figure 2 , figure 2 A schematic diagram of a three-dimensional structure of a GaN-based microwave power device with low frequency loss provided by an embodiment of the present invention. The preparation metho...

Embodiment 2

[0153] See Figure 4 , Figure 4 A schematic diagram of a three-dimensional structure after bonding a Schottky diode and a GaN-based microwave power device provided by an embodiment of the present invention. In this embodiment, on the basis of the foregoing embodiments, a Schottky diode-based millimeter wave linearization method of the present invention will be described in detail. Specifically, the method may include:

[0154] Low-frequency loss GaN-based microwave power devices use SiC substrates, AlGaN / GaN HEMTs with a gate width of 100 μm and a gate length of 0.1 μm, and vertical structure Schottky diodes use W as the Schottky metal.

[0155] The device is manufactured on the purchased epitaxial substrate sample which already contains substrate, nucleation layer, buffer layer and potential barrier layer.

[0156] Step 1, cleaning the epitaxial substrate sample.

[0157] First place the sample in acetone and sonicate for 2 minutes, then boil it for 10 minutes in a posit...

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Abstract

The invention relates to a millimeter wave linearization method based on a Schottky diode, comprising the steps of: preparing a GaN-based microwave power device, testing and obtaining the input impedance of the GaN-based microwave power device; The Schottky diode was fabricated and the output impedance of the Schottky diode was measured. The output impedance of Schottky diode is conjugated with the input impedance of GaN-based microwave power device. GaN-based microwave power device and Schottky diode are interconnected by bon. As that embodiment of the invention reduce the space area of the device, the linearity compensation can be improved and the adjustability can be enhance, the best effect can be exerted under the high frequency and the wide band environment, and the integration degree and the work speed of the device can be further improved.

Description

technical field [0001] The invention belongs to the field of radio frequency technology, and in particular relates to a Schottky diode-based millimeter wave linearization method. Background technique [0002] GaN materials can form AlGaN / GaN heterostructures. This heterostructure can not only obtain high electron mobility at room temperature, but also extremely high peak electron velocity and saturation electron velocity, and can obtain higher than second-generation compound semiconductor Higher two-dimensional electron gas concentration in heterojunctions. These advantages make AlGaN / GaN high electron mobility transistors significantly surpass GaAs-based HEMTs and INP-based HEMTs in terms of high power, high efficiency, wide bandwidth, and low noise performance in the microwave and millimeter wave bands. [0003] Millimeter waves generally refer to electromagnetic waves with a frequency of 30GHz to 300GHz. The frequency bandwidth of millimeter waves can meet business needs...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/07H01L25/16H01L29/872
CPCH01L25/071H01L25/16H01L29/872
Inventor 杨凌马晓华芦浩宓珉翰周小伟侯斌祝杰杰郝跃
Owner XIDIAN UNIV
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