Impedance conversion SPDT microwave switch

Abstract

The invention discloses an impedance conversion SPDT microwave switch, comprising an impedance conversion circuit, a current limiting bias circuit and a logic control circuit. Characterized in that: The impedance conversion circuit includes a first series branch disposed between the common port and the first radio frequency port, a second series branch disposed between the common port and the second radio frequency port, a first parallel branch disposed between the first radio frequency port and ground, and a second parallel branch disposed between the second radio frequency port and ground. First, the second series branch consists of a quarter wavelength microstrip line. The first parallel branch consists of a first switching diode and a first capacitor. The positive electrode of the first switching diode is connected to the first radio frequency port, and the negative electrode is grounded through the first capacitor. The second shunt branch consists of a second switching diode and asecond capacitor, the positive electrode of the second switching diode is connected to the second radio frequency port, and the negative electrode of the second switching diode is grounded through the second capacitor. The invention can be widely applied to various communication systems.

Description

technical field [0001] The invention relates to a microwave switch, in particular to an impedance conversion single-pole double-throw microwave switch. Background technique [0002] Single-pole double-throw microwave switches are widely used in microwave transceiver communication systems, and are an important part of the transceiver channel, used for switching the transceiver channel. Since the single-pole double-throw microwave switch is located at the front end of the channel, its performance directly determines the key parameters such as noise figure and linearity of the entire transceiver system, so it is required to have the characteristics of low insertion loss, low power consumption, high linearity and high isolation. [0003] Traditional single-pole double-throw microwaves usually use MOSFETs or PIN diodes to turn on and off to realize the switching function. A microwave switch using a MOSFET structure usually has a large insertion loss and poor linearity; a microwa...

AI Technical Summary

Problems solved by technology

The microwave switch with MOSFET structure usually has large insertion loss and poor linearity; the microwave switch channel with PIN diode structure requires high bias voltage and large bias current, and consumes a lot of power

It is difficult for microwave switches with MOSFET structure or PIN diode structure to meet the requirements of high-performance communication systems for low insertion loss, low power consumption and high linearity of microwave switches.

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