Heat laser strip device

Abstract

A laser stripping apparatus is disclose, include a laser strip apparatus body, A laser stripping apparatus body include a mobile platform arranged at a lower end, the mobile platform is provided witha heating base, A sample table is arranged on the heating base, the heating base comprises an electric heating device arranged below the sample table and used for heating the sample table, A temperature sensor for detect that temperature of the sample table is also arranged at the low end of the sample table, and a heat insulating cover is cover above the sample table, and a heat insulating transparent window convenient for the laser to pass through is arranged at the position corresponding to the top end of the heat insulating cover and the sample table. The heating laser stripping apparatusof the present invention provides a suitable temperature environment for stripping GaN epitaxial wafers, solves the problem of residual stress of GaN epitaxial wafers grown on a sapphire substrate, and avoids the occurrence of easy fragmentation during stripping.

Description

technical field [0001] The invention relates to a heating laser stripping device. Background technique [0002] The Ⅲ / Ⅴ nitrides mainly composed of GaN, InGaN and AlGaN are semiconductor materials that have attracted much attention in recent years. They are the core components of light-emitting diodes in semiconductor lighting. The physical and chemical stability, high saturation electron mobility and other characteristics make it the most preferred material for optoelectronic devices such as lasers and light-emitting diodes. [0003] However, due to the limitations of GaN (gallium nitride) growth technology, most of today's large-area GaN materials are grown on sapphire substrates. Although the GaN grown on the sapphire substrate is of high quality and the most widely used, the development of GaN (third-generation semiconductor material)-based semiconductor devices is greatly limited due to the non-conductivity and poor thermal conductivity of sapphire. In order to avoid ...

AI Technical Summary

Problems solved by technology

[0006] In order to solve the above-mentioned technical problems, the object of the present invention is to provide a heating laser stripping device to solve the residual stress problem of the GaN epitaxial wafer grown on the sapphire substrate, and to avoid the fragile situation when stripping when the stripping thickness exceeds 50 microns.

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