Non-volatile storage method and device

A non-volatile storage and volatile technology, applied in the direction of electrical components, etc., can solve problems such as the inability to realize the gating function of devices, and achieve the effect of self-selection, low static power consumption, and low power consumption resistance conversion storage

Active Publication Date: 2022-05-13
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When this type of selector operates at a large operating current, the conductive bridge maintains characteristics and is not easy to break, and becomes non-volatile storage characteristics, which cannot realize the gating function of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Non-volatile storage method and device
  • Non-volatile storage method and device
  • Non-volatile storage method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0042] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0043] The present disclosure provides a non-volatile storage method and device, which realize information storage by controlling and reading the breakage degree of the conductive path of the volatile resistance transition device, thereby directly using the volatile resistance transition device for non-volatile storage .

[0044] The volatile resistance switching device of the present disclosure is used for non-volatile storage, and it no longer acts as a selector, so it no longer needs a high driving current, which is beneficial to realize low power consumption storage applications. Moreover, compared with the traditional resistance transition memory device 1S1R solution, the present disclosure uses a volatile resist...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present disclosure proposes a non-volatile storage method and device; wherein, the non-volatile storage method includes: using a volatile resistance transition device as a non-volatile storage storage unit; and controlling and reading the stored The degree of breakage of the conductive path of the volatile resistance switching device, thereby realizing non-volatile storage. The present disclosure adopts the volatile resistance transition device as the storage unit, which can increase the storage density of the resistance transition memory array, reduce processing steps, and reduce production cost.

Description

technical field [0001] The present disclosure relates to the technical field of memory in the microelectronics industry, and in particular to a non-volatile memory method and device. Background technique [0002] With the continuous innovation of microelectronics and semiconductor technology, FLASH storage technology is facing a series of bottleneck problems, such as the impossibility of unlimited thinning of the floating gate with the development of technology, limited data retention time, and excessive operating voltage. Among many new types of memory, resistive memory has gradually become the research focus of new non-volatile memory due to its advantages such as low operating power consumption, good endurance (Endurance), simple structure, and small device area. [0003] According to the stability of the conductive path in the case of power failure, the resistance transition device is divided into two types, a volatile resistance transition device and a non-volatile resi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/20
Inventor 刘琦赵晓龙吴祖恒刘宇张凯平路程张培文赵盛杰姚志宏余兆安吕杭炳刘明
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap