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Gallium arsenide polycrystal synthesis method

A synthesis method and gallium arsenide technology, which is applied in the field of semiconductor single crystal material preparation, can solve the problems of stoichiometric ratio deviation, low polycrystalline material filling, rich gallium, etc., and achieve improved synthesis ratio, increased production capacity, and temperature gradient distribution uniform effect

Inactive Publication Date: 2018-11-23
HANERGY NEW MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a method for synthesizing gallium arsenide polycrystals, so as to solve the problem of low filling of polycrystalline materials in PBN crucibles in existing synthesis techniques, and polycrystalline materials are prone to voids, gallium-rich, and stoichiometric ratios. Deviation etc.

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  • Gallium arsenide polycrystal synthesis method
  • Gallium arsenide polycrystal synthesis method

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Embodiment 1

[0031] This embodiment provides a method for synthesizing a gallium arsenide polycrystal, specifically a method for synthesizing a cylindrical gallium arsenide polycrystal rod, which includes the following steps:

[0032] providing a reaction vessel having a connected upper cavity and a lower cavity, installing a container in the upper cavity, and filling the container with gallium, and filling arsenic in the lower cavity;

[0033] sealing the reaction vessel, and vacuumizing the reaction vessel;

[0034] Carrying out temperature-raising treatment on the reaction vessel, so that the synthesis reaction of arsenic and gallium is carried out;

[0035] After the synthesis reaction is completed, the temperature of the reaction container is lowered, and then the synthesized gallium arsenide polycrystal is taken out.

[0036] Specifically, the reaction vessel in this embodiment is a quartz tube 1 , and the holding vessel is a crucible 2 .

[0037] The steps of filling gallium and a...

Embodiment 2

[0049] This embodiment provides a method for synthesizing polycrystalline gallium arsenide, specifically a method for synthesizing a polycrystalline rod of semi-insulating gallium arsenide. Graphite material, and add a certain amount of high-purity graphite powder in the crucible.

[0050] It specifically includes: putting a certain quality of 6N or 7N high-purity gallium into the crucible 2, and then into the upper chamber of the quartz tube 1; or first putting the crucible 2 into the quartz tube 1, and then putting 6N or 7N High-purity gallium is packed in the crucible 2; then the crucible 2 is put into the crucible holder 8 in the quartz tube 1, and a certain amount of high-purity graphite powder is added in the crucible, the material of the crucible holder 8 is a high-purity graphite material, It is convenient to synthesize semi-insulating gallium arsenide polycrystal; the crucible holder 8 is provided with a groove or a through hole connecting the upper chamber and the lo...

Embodiment 3

[0054] This embodiment provides a method for synthesizing semiconductor-grade cylindrical polycrystalline rods. The difference between the method of synthesis and the above embodiments is that monocrystalline silicon wafers are filled in the container.

[0055] Specifically, it includes: putting a certain amount of 6N or 7N high-purity arsenic into the cleaned quartz tube 1, and adding excess arsenic according to the space of the quartz tube 1 to ensure that it is compatible with gallium arsenide under high-temperature melting conditions. The decomposition pressure is kept in balance;

[0056] Put a certain amount of 6N or 7N high-purity gallium into the crucible 2, and then put it into the quartz tube 1; or first put the crucible 2 into the quartz tube 1, and then put a certain amount of 6N or 7N high-purity gallium , and a certain amount of high-purity monocrystalline silicon wafers are put into the crucible 2; then they are put into the crucible holder 8 in the quartz tube ...

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Abstract

The invention provides a gallium arsenide polycrystal synthesis method. The gallium arsenide polycrystal synthesis method comprises the following steps: providing a reaction container with an upper cavity and a lower cavity, which are communicated; filling arsenic into the lower cavity, mounting a bearing container into the upper cavity and filling gallium into the bearing container; then sealingand vacuumizing the reaction container; then carrying out temperature rising treatment on the reaction container so as to carry out synthesis reaction on the arsenic and the gallium; finally, carryingout cooling treatment on the reaction container, and taking out a synthesized gallium arsenide polycrystal. According to the gallium arsenide polycrystal synthesis method, polycrystal synthesis is carried out by adopting a vertical Bridgman method and the production capacity is high; a polycrystal material is molded in the bearing container, so that a single crystal can be completely matched withthe bearing container when being charged, so that the feeding amount of each heat is reduced and the single crystal production cost is reduced; the reaction container is vertically arranged and is provided with the upper cavity and the lower cavity; temperature gradient distribution of a heat field of the reaction container is uniform and the synthesized polycrystal material is dense and has no holes and no rich gallium; the synthesis ratio is greatly improved when being compared with the previous synthesis ratio.

Description

technical field [0001] The invention relates to the technical field of preparation of semiconductor single crystal materials, in particular to a method for synthesizing gallium arsenide polycrystals. Background technique [0002] Gallium arsenide is widely used in microelectronic devices such as high frequency, high speed, high temperature and radiation resistance. Gallium arsenide materials are divided into two categories, namely semi-insulating gallium arsenide materials and semiconductor gallium arsenide materials. To obtain gallium arsenide single crystal materials, the synthesis of gallium arsenide polycrystalline raw materials is firstly carried out. Since gallium arsenide is a binary compound, the vapor pressure of arsenic is high, and arsenic and gallium are easily oxidized, so it is not easy to synthesize polycrystalline gallium arsenide that meets the stoichiometric ratio. The current technology uses the horizontal Bridgman method to synthesize polycrystalline ga...

Claims

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Application Information

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IPC IPC(8): C30B29/42C30B28/06
CPCC30B29/42C30B28/06
Inventor 肖亚东雷仁贵谈笑天
Owner HANERGY NEW MATERIAL TECH CO LTD
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