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Image sensor and forming method thereof

An image sensor and filter technology, applied in the direction of electric solid devices, semiconductor devices, electrical components, etc., can solve the problems of reducing the color saturation of the output image, poor image effect, etc., to improve the color saturation and increase the absorption effect. Effect

Inactive Publication Date: 2018-11-13
HUAIAN IMAGING DEVICE MFGR CORP
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Problems solved by technology

[0006] However, in the prior art, the anti-reflection film has a uniform thickness and is only suitable for green light, and has a large reflectivity for red and blue light, resulting in reduced color saturation of the output image, especially in low-light conditions , the image is worse

Method used

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  • Image sensor and forming method thereof

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Embodiment Construction

[0031] In the prior art, by setting an anti-reflection film, the pixel device in the semiconductor substrate can obtain more incident light passing through the filter matrix, and then absorb the incident photons passing through each filter through the photodiode And form a photocurrent.

[0032] However, in the prior art, the anti-reflection film has a uniform thickness and is only suitable for green light, and has a large reflectivity for red and blue light, resulting in reduced color saturation of the output image, especially in low-light conditions , the image quality is even worse.

[0033] combined reference figure 1 and figure 2 , figure 1 is a top view of an image sensor in the prior art, figure 2 Yes figure 1 Sectional view along cutting line A1-A2.

[0034] The image sensor may include a semiconductor substrate 100, a pixel device 102, an anti-reflection film 120, and a filter matrix. Wherein, the pixel device 102 may be located in the semiconductor substrate...

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Abstract

The invention provides an image sensor and a forming method thereof. The image sensor comprises a semiconductor substrate, a pixel device located in the semiconductor substrate, an anti-reflection film covering the semiconductor substrate as well as light filter matrixes stacked on the anti-reflection film, wherein each light filter matrix comprises various light filters in different colors; the anti-reflection film has different thicknesses corresponding to areas of the light filters in different colors, and the thicknesses are determined according to color wavelengths of the corresponding light filters. With the adoption of the scheme, different light absorption effects of the image sensor can be enhanced, and color saturation of output images can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an image sensor and a forming method thereof. Background technique [0002] The image sensor is the core component of the camera equipment, which realizes the image capture function by converting the optical signal into an electrical signal. Taking a CMOS image sensor (CMOS Image Sensors, CIS) device as an example, due to its advantages of low power consumption and high signal-to-noise ratio, it has been widely used in various fields. [0003] Taking Back-side Illumination (BSI for short) CIS as an example, in the existing manufacturing process, logic devices, pixel devices and metal interconnection structures are first formed in the semiconductor substrate, and then the carrier wafer and the described The front side of the semiconductor substrate is bonded, and then the back of the semiconductor substrate is thinned, and then the subsequent process of formin...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/1462H01L27/14621H01L27/14685
Inventor 王亮内藤逹也
Owner HUAIAN IMAGING DEVICE MFGR CORP
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