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A coaxial double dielectric interdigitated high power microwave device

A high-power microwave, dual-dielectric technology, applied in electrical components, circuits, discharge tubes, etc., to achieve the effect of enhancing clustering and improving beam conversion efficiency

Active Publication Date: 2020-09-18
INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Devices with this structure do not have anti-wave dielectric Cherenkov devices, only traveling-wave dielectric Cherenkov devices

Method used

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  • A coaxial double dielectric interdigitated high power microwave device
  • A coaxial double dielectric interdigitated high power microwave device
  • A coaxial double dielectric interdigitated high power microwave device

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Embodiment 1

[0031]The cathode in the device is made of graphite material, which relies on the electric field force between the cathode and anode to generate a ring-shaped high-current electron beam. The inner diameter of the graphite cathode is 2.3cm and the outer diameter is 2.4cm. Under the guidance of the magnetic field, the annular high-current electron beam enters the coaxial dielectric cavity through the annular injection port for transmission. The guiding magnetic field strength of the electron beam is 0.6T, the voltage is 350kV, and the current is 1.6kA. The inner diameter of the metal outer cylinder is 3.2cm, the inner wall of the metal outer cylinder and the coaxial inner conductor are periodically filled with two kinds of dielectrics with different dielectric coefficients, the axial structure of the coaxial dielectric filled on the inner wall of the metal outer cylinder and the outer wall of the coaxial inner conductor The parameters and arrangement are exactly the same. One of...

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Abstract

The invention discloses a coaxial double-dielectric interdigital arrangement high-power microwave device. The coaxial double-dielectric interdigital arrangement high-power microwave device comprises an outer cylinder, wherein a negative electrode is arranged in the outer cylinder; a coaxial inner conductor is arranged in the axis direction of the outer cylinder; the negative electrode is coaxial with the coaxial inner conductor; the coaxial double-dielectric interdigital arrangement high-power microwave device is characterized in that the space between the outer cylinder and the coaxial innerconductor is filled with coaxial dielectrics, wherein the coaxial dielectrics are two kinds of dielectrics which are periodically staggered in a filling manner and are different in dielectric coefficients; the coaxial dielectric layer is provided with an annular structure to form a coaxial dielectric cavity; the coaxial dielectrics are divided into an inner coaxial dielectric part and an outer coaxial dielectric part through the coaxial dielectric cavity; the two kinds of dielectrics of the inner coaxial dielectric part and the outer coaxial dielectric part are in interdigital arrangement; annular strong-current electron beams emitted by the negative electrode are guided through a magnetic field to be transmitted in the coaxial dielectric cavity; and by adoption of the device with the structure, microwaves are totally reflected in the transmitted dielectric, so that clustering of the electron beams is enhanced, and the beam-wave conversion efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of high-power microwave devices, and in particular relates to a high-power microwave device with coaxial double dielectric interdigitated arrangement. Background technique [0002] High-power microwave (HPM) generally refers to electromagnetic waves with a peak power above 100MW and an operating frequency in the range of 1-300GHz. The research and development of high power microwave technology and microwave devices has a history of more than 30 years. In recent years, with the continuous development of pulse power technology and plasma physics, high power microwave technology has developed rapidly, especially in the application of high power microwave sources. Great progress has been made in development. So far, its power level has been increased by several orders of magnitude compared with ordinary microwave sources, and it has been widely used in many scientific fields, thus making high-power microwave a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J23/09
CPCH01J23/09
Inventor 张运俭丁恩燕
Owner INST OF APPLIED ELECTRONICS CHINA ACAD OF ENG PHYSICS
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